Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Tomoko Matsudai"'
Autor:
Tatsunori Sakano, Kento Adachi, Tomoaki Inokuchi, Kazuto Takao, Yoko Iwakaji, Ryohei Gejo, Tomoko Matsudai
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfd2b34366e34e3614708fa7c405184e
https://doi.org/10.1109/ispsd49238.2022.9813666
https://doi.org/10.1109/ispsd49238.2022.9813666
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A triple-gate 1.2-kV Si-insulated-gate bipolar transistor (TG-IGBT) is proposed in order to drastically improve both turn-on loss (Eon) and turn-off loss (Eoff) by using a novel gate drive control technique. In this work, we fabricated a 1.2-kV TG-IG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed77e10ec50530028df22498a8f875f7
https://doi.org/10.23919/ispsd50666.2021.9452246
https://doi.org/10.23919/ispsd50666.2021.9452246
Autor:
Takuya Saraya, Kazuyoshi Furukawa, Iriya Muneta, A. Nakajima, Kuniyuki Kakushima, Hiroshi Iwai, Shin Ichi Nishizawa, Katsumi Satoh, Naoyuki Shigyo, Hiromichi Ohashi, Kazuo Tsutsui, Toshiro Hiramoto, Masahiro Watanabe, H. Wakabayashi, Toshihiko Takakura, Takuya Hoshii, Tomoko Matsudai
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the $J_{\mathrm{C}^{-}}V_{\text{CE}}$ characteristics obtained by 3D- TCAD simulations and experiments
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6b18a5f8247ab822458467014a118af
https://doi.org/10.1109/edtm50988.2021.9420922
https://doi.org/10.1109/edtm50988.2021.9420922
Autor:
Kazuo Tsutsui, Takuya Saraya, Atsushi Ogura, Ken Takeuchi, Munetoshi Fukui, Hiromichi Ohashi, Wataru Saito, Kazuo Itou, Toshiro Hiramoto, Toshihiko Takakura, Takuya Hoshii, Kuniyuki Kakushima, Shin Ichi Nishizawa, Shinichi Suzuki, Katsumi Satoh, Ichiro Omura, Hiroshi Iwai, Masanori Tsukuda, Tomoko Matsudai
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Full integration of a back-gate-controlled IGBT (BC-IGBT), which comprises top and bottom independently controlled MOS gates, is experimentally demonstrated. By using the back side MOS gate for accelerating electron drain and blocking of hole injecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebb71ca392e378ef09d917ef18f09264
https://doi.org/10.1109/iedm13553.2020.9371909
https://doi.org/10.1109/iedm13553.2020.9371909
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::148d3ca51df3c5cc0e48fcfc48b8f855
https://doi.org/10.7567/ssdm.2020.d-8-04
https://doi.org/10.7567/ssdm.2020.d-8-04
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9641f4a964fb9ea6e8145913e0f8f3b3
https://doi.org/10.7567/ssdm.2020.d-8-02
https://doi.org/10.7567/ssdm.2020.d-8-02
Autor:
Toshihiko Takakura, Takuya Hoshii, Tomoko Matsudai, Ken Takeuchi, Munetoshi Fukui, Takuya Saraya, Iriya Muneta, Hiroshi Iwai, Kazuo Tsutsui, Shinichi Suzuki, Masahiro Watanabe, Kazuo Itou, Kuniyuki Kakushima, Shin Ichi Nishizawa, Hiromichi Ohashi, Toshiro Hiramoto, Naoyuki Shigyo, H. Wakabayashi, Kazuyoshi Furukawa, A. Nakajima, Katsumi Satoh
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Technology CAD (TCAD) has been recognized as a powerful design tool for Si insulated gate bipolar transistors (IGBTs). Here, physical models, such as a mobility model for carrier-carrier scattering, were investigated for a predictive TCAD. Simulated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3858d7dc0b79bfedeacd2fa5c8921e89
https://doi.org/10.23919/sispad49475.2020.9241627
https://doi.org/10.23919/sispad49475.2020.9241627
Autor:
Kazuo Tsutsui, Y. Numasawa, Munetoshi Fukui, Kazuo Itou, Atsushi Ogura, Wataru Saito, Naoyuki Shigyo, Masahiro Watanabe, T. Sarava, Kuniyuki Kakushima, H. Ohash, Kazuyoshi Furukawa, Ken Takeuchi, Ichiro Omura, H. Wakabayashi, Toshihiko Takakura, Takuya Hoshii, Shinichi Suzuki, Masanori Tsukuda, Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Shin Ichi Nishizawa, Hiroshi Iwai
Publikováno v:
ASICON
In this work, the switching of 3300V IGBTs by 5V gate drive voltage has been successfully demonstrated for the first time. IGBT was designed based on a scaling principle. Comparing with conventional 15V-driven non-scaled IGBTs, the tum-off tail curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b1fec66735b041f8d087cc8e1453400
https://doi.org/10.1109/asicon47005.2019.8983633
https://doi.org/10.1109/asicon47005.2019.8983633
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea601bcdef70b042586b6d26cb912821
https://doi.org/10.7567/ssdm.2019.k-3-04
https://doi.org/10.7567/ssdm.2019.k-3-04
Autor:
Shinichi Suzuki, Shin Ichi Nishizawa, Kazuo Itou, Y. Numasawa, Kazuo Tsutsui, Masanori Tsukuda, Ichiro Omura, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Masahiro Watanabe, Hiromichi Ohashi, Atsushi Ogura, Toshiro Hiramoto, Hitoshi Wakabayashi, Hiroshi Iwai, Munetoshi Fukui, Kazuyoshi Furukawa, Kiyoshi Takeuchi, Toshihiko Takakura, Takuya Hoshii, Naoyuki Shigyo, Katsumi Satoh, Takuya Saraya
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this work, 5V gate drive 3300V IGBTs, designed based on a scaling principle, have been demonstrated. Turn-off characteristics without noticeable degradation in the gate voltage waveforms were confirmed. Turn-off tail current of the scaled devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f27f1fdb0647cf6b55dace948dbfd98
https://doi.org/10.1109/ispsd.2019.8757626
https://doi.org/10.1109/ispsd.2019.8757626