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pro vyhledávání: '"Tomoki Tateyama"'
Autor:
Taisei Sakaguchi, Tomoki Tateyama, Shintaro Tanaka, Wei Chen Wen, Hiroshi Nakashima, Keisuke Yamamoto, Liwei Zhao, Dong Wang, Yuta Nagatomi
Publikováno v:
Materials Science in Semiconductor Processing. 70:246-253
In this paper, we present comprehensive results on Al-postmetallization annealing (Al-PMA) effect for the SiO 2 /GeO 2 gate stack on a Ge substrate, which were fabricated by a physical vapor deposition method. The effective oxide thickness of metal-o
Autor:
Dong Wang, Keisuke Yamamoto, Tomoki Tateyama, Shintaro Tanaka, Yuta Nagatomi, Hiroshi Nakashima
Publikováno v:
Semiconductor Science and Technology. 32:035001
We investigated the source/drain (S/D) parasitic resistance (R P) of a Ge n-channel metal-oxide-semiconductor field-effect transistor (n-MOSFET) with TiN-S/D. The R P was as high as ~1400 Ω, which is attributed to a very thin amorphous interlayer (a