Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tomokazu Okazaki"'
Autor:
Tomokazu Okazaki, Takuya Omotehara, Shinichi Kawata, Takahiro Amano, Masanobu Enomoto, Yuichi Nagakawa, Masahiro Itoh
Publikováno v:
Diseases of the Colon & Rectum; Jan2024, Vol. 67 Issue 1, p120-128, 9p
Autor:
Hideki Fujihara, Muneo Yamazaki, Yutaka Tabei, Tomokazu Okazaki, Osamu Noro, Ayumi Kanno, Shinji Akada, Kayo Yamamoto, Atsushi Kasai, Takeo Harada, Yuhya Wakasa, Toshiya Igarashi, Mutsuo Tsuyama
Publikováno v:
Plant cell reports. 39(11)
This study established a rapid method for the gene expression analysis in potato tubers. The use of microtubers would be useful for primary evaluation of tuber-expressed genes. In the development of transgenic potato or of potato with other genome mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a5278f7957125511bd717ee469a611b
https://pubmed.ncbi.nlm.nih.gov/32696230
https://pubmed.ncbi.nlm.nih.gov/32696230
Autor:
Tomonori Ikari, Masamichi Naitoh, Yasuo Shirouzu, Akihiko Watanabe, Yoshinori Kaya, Tomokazu Okazaki, Satoshi Nishigaki, K. Yamada
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 5:89-93
Reaction between deposited Ca layers and the Si(111) substrate has been studied by metastable-induced electron spectroscopy (MIES) and low-energy electron diffraction (LEED). When a Ca-deposited (about 1ML) Si(111) surface was annealed at temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5d1de286035f043c7fc84e83dd8ee22
https://doi.org/10.1380/ejssnt.2007.89
https://doi.org/10.1380/ejssnt.2007.89
Autor:
Satoshi Kurai, Tomokazu Okazaki, Shuichi Kubo, Tsunemasa Taguchi, Shigeki Manabe, Yasunari Nanba
Publikováno v:
Journal of Crystal Growth. 236:66-70
Effective pre-treatment of metalorganic chemical vapor deposition-grown GaN template for epitaxial growth has been investigated, for the improvement of crystalline quality of homoepitaxial GaN on GaN template by radio-frequency molecular beam epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67942a7cb46d2373fa8b0eb2a6109bf1
https://doi.org/10.1016/s0022-0248(01)02157-1
https://doi.org/10.1016/s0022-0248(01)02157-1
Autor:
Tomokazu Okazaki, Shigeki Manabe, A. Kawabe, T. Sugita, Yoichi Yamada, Tsunemasa Taguchi, Shuichi Kubo, Satoshi Kurai
Publikováno v:
physica status solidi (a). 176:459-463
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9c022b2dc0eb30408e6971d5dc3fcbd
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<459::aid-pssa459>3.0.co
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<459::aid-pssa459>3.0.co
Publikováno v:
Optoelectronic Materials and Devices II.
We have attempted the growth of GaN by RF-MBE which crystalline quality is a match for that by MOCVD, performing homoepitaxial growth using MOCVD-GaN as a substrate. We confirmed that homoepitaxial GaN had Ga polarity by (1 x 1) RHEED streaky pattern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::861dc2aa6cfd6a4c34c32ec8bc6cc786
https://doi.org/10.1117/12.392111
https://doi.org/10.1117/12.392111
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