Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tomokatsu Watanabe"'
Autor:
Tomokatsu Watanabe, Yutaka Fukui, Shiro Hino, Shingo Tomohisa, Naruhisa Miura, Kazuyasu Nishikawa
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 23:99-108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0c89b4c9cc3d34a1a6e1f0ebc651491
https://doi.org/10.1109/tdmr.2023.3234979
https://doi.org/10.1109/tdmr.2023.3234979
Publikováno v:
IEEE Transactions on Electron Devices. 68:6321-6329
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dee5d296502f543db423808c859935b5
https://doi.org/10.1109/ted.2021.3125284
https://doi.org/10.1109/ted.2021.3125284
Publikováno v:
Materials Science Forum. 1004:565-570
We used the POCl3 gate technique for the fabrication of 4H-SiC vertical MOSFETs, and examined its effect on the VTH-RON tradeoff and the compatibility with device fabrication. The gate oxide film was formed by thermal dry O2 oxidation followed by POC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c08ea364ad8ca44703668d4e0fd45a01
https://doi.org/10.4028/www.scientific.net/msf.1004.565
https://doi.org/10.4028/www.scientific.net/msf.1004.565
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:163-169
The depletion-mode time-dependent dielectric breakdown (DM-TDDB) mechanism was investigated with n-type 4H-SiC MOS capacitors depleted by high-voltage dc bias. Under the DM-TDDB stress, the hole generation beneath the oxide/SiC interface and its inje
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fabcd9dc2eaaa56e1194f68ab848872
https://doi.org/10.1109/tdmr.2016.2635160
https://doi.org/10.1109/tdmr.2016.2635160
Publikováno v:
Materials Science Forum. :1035-1038
Forward voltage of SiC pin diodes is evaluated by device simulation, where a p-type contact is described by Schottky barrier to a p-type surface region. The contact resistance is calculated from the comparison to I-V characteristic of Schottky struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04bdba1f7e6d14493e7fc8f80bdfc126
https://doi.org/10.4028/www.scientific.net/msf.600-603.1035
https://doi.org/10.4028/www.scientific.net/msf.600-603.1035
Autor:
Naruhisa Miura, Tatsuo Oomori, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Masayuki Imaizumi, Yoichiro Tarui
Publikováno v:
Materials Science Forum. :999-1002
A major crystalline defect which causes a pn junction reverse leakage current has been identified. A faintish stripe defect (FSD), the main cause of the leakage current, was observed in about 90% of the current leak points of our pn diodes. Double sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::167c9b0504090ccf03a4a95f9091a630
https://doi.org/10.4028/www.scientific.net/msf.600-603.999
https://doi.org/10.4028/www.scientific.net/msf.600-603.999
Publikováno v:
Materials Science Forum. :585-590
Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals were experimentally investigated. Annealing temperature and annealing time dependence of acceptor activation and activated hole’s behavior were exami
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f364d7392becbbdf2dfdd3bdef779c3
https://doi.org/10.4028/www.scientific.net/msf.600-603.585
https://doi.org/10.4028/www.scientific.net/msf.600-603.585
Autor:
Tatsuo Oomori, Tetsuya Takami, Naoki Yutani, Keiko Fujihira, Naruhisa Miura, Ken Ichi Ohtsuka, Tomokatsu Watanabe, Yukiyasu Nakao, Masayuki Imaizumi
Publikováno v:
Materials Science Forum. :827-830
Inversion-type 4H-SiC power MOSFETs using p-body implanted with retrograde profiles have been fabricated. The Al concentration at the p-body surface (Nas) is varied in the range from 5×1015 to 2×1018 cm-3. The MOSFETs show normally-off characterist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3baf849de862c6f97718501c56938ade
https://doi.org/10.4028/www.scientific.net/msf.556-557.827
https://doi.org/10.4028/www.scientific.net/msf.556-557.827
Autor:
Shin Ichi Kinouchi, Naruhisa Miura, Yukiyasu Nakao, Tetsuya Takami, Masayuki Imaizumi, Keiko Fujihira, Yoichiro Tarui, Hiroshi Nakatake, Tatsuo Ozeki, Tomokatsu Watanabe
Publikováno v:
Materials Science Forum. :1289-1292
Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca0f8ea09c801d04481618543a691f5
https://doi.org/10.4028/www.scientific.net/msf.527-529.1289
https://doi.org/10.4028/www.scientific.net/msf.527-529.1289
Autor:
Yoichiro Tarui, Tatsuo Ozeki, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Masayuki Imaizumi, Tatsuo Oomori, Tetsuya Takami, Hiroaki Sumitani, Naruhisa Miura
Publikováno v:
Materials Science Forum. :1285-1288
4H-SiC epilayer channel MOSFETs are fabricated. The MOSFETs have an n- epilayer channel which improves the surface where the MOS channel is formed. By the optimization of the epilayer channel and the MOSFET cell structure, an ON-resistance of 12.9 mc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3218bbcb2290ce88d9acdbcd3b442d91
https://doi.org/10.4028/www.scientific.net/msf.527-529.1285
https://doi.org/10.4028/www.scientific.net/msf.527-529.1285