Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Tomohisa Yoshie"'
Autor:
Takeshi Yabutsuka, Eisuke Sawada, Shogo Esaki, Seungwon Park, Masaya Oda, Tomohisa Yoshie, Junpei Harada, Shigeomi Takai, Motoaki Nishijima, Takeshi Yao
Publikováno v:
Solid State Ionics. 313:1-6
We have successfully synthesized corundum-type structured solid solutions of (Fe2O3)1-x(Al2O3)x in the whole compositional range (0 ≤ x ≤ 1) by means of mechanochemical synthesis route starting from γ-Fe2O3 and γ-Al2O3 mixture. The lattice para
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e053bc2bb264dc14d9da27e6169f5b66
https://doi.org/10.1016/j.ssi.2017.10.026
https://doi.org/10.1016/j.ssi.2017.10.026
Autor:
Kei Kasahara, Shibata Satoshi, Atsushi Fukui, Masayuki Nakano, Tomohisa Yoshie, Satoshi Shimizu
Publikováno v:
2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We are concerned with the essential qualification of the Dye-Sensitized Solar Cell (DSSC) for energy harvester in the Internet of Things (IoT)'s perspectives. It would convincingly need the higher conversion efficiency, and the higher voltage, the lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc81d8d461bda2cab68998c8b3692d5b
https://doi.org/10.1109/imfedk48381.2019.8950729
https://doi.org/10.1109/imfedk48381.2019.8950729
Autor:
Akira Hashimoto, Yoshihiro Sawada, Takeshi Hoshika, Tomohisa Yoshie, Ichiro Koiwa, Tetsuya Osaka
Publikováno v:
Scopus-Elsevier
A Bi-Ta multi-seeding layer system is proposed to improve the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films prepared by a sol-gel method for applications to nonvolatile memories. For seeding layers composed of different ratios of Bi to Ta,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7669959b36e989f7ab78751119678af
https://doi.org/10.1143/jjap.39.5476
https://doi.org/10.1143/jjap.39.5476
Analysis of the degradation mechanism of Pt/SrBi2(Ta/Nb)2O9/Pt capacitors during reductive annealing
Autor:
Atsushi Tofuku, Ichiro Koiwa, Yoshihiro Sawada, Tomohisa Yoshie, Hiroyo Kobayashi, Akira Hashimoto, Tetsuya Osaka
Publikováno v:
Scopus-Elsevier
Degradation mechanism of the Pt/SrBi2Ta2xO9/Pt and Pt/SrBi2(Ta1−x/Nbx)2O9/Pt capacitors exposed to the hydrogen attack has been analyzed. The capacitors were fabricated from thin-films consisting of SrBi2Ta2xO9(1 ≦ × ≦ 1.1) and SrBi2(Ta1−x/N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8f0ecda30854e4bb79c2373811f3c06
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033314309&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033314309&partnerID=MN8TOARS
