Výsledky vyhledávání - "Tomohisa Yoshie"

Synthesis and anode properties of corundum-type structured (Fe 2 O 3 ) 1-x (Al 2 O 3 ) x solid solutions in the whole compositional range

Autor: Takeshi Yabutsuka, Eisuke Sawada, Shogo Esaki, Seungwon Park, Masaya Oda, Tomohisa Yoshie, Junpei Harada, Shigeomi Takai, Motoaki Nishijima, Takeshi Yao

Publikováno v: Solid State Ionics. 313:1-6

We have successfully synthesized corundum-type structured solid solutions of (Fe2O3)1-x(Al2O3)x in the whole compositional range (0 ≤ x ≤ 1) by means of mechanochemical synthesis route starting from γ-Fe2O3 and γ-Al2O3 mixture. The lattice para

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e053bc2bb264dc14d9da27e6169f5b66
https://doi.org/10.1016/j.ssi.2017.10.026

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Invited: Possibility of dye-sensitized solar cell as energy harvester

Autor: Kei Kasahara, Shibata Satoshi, Atsushi Fukui, Masayuki Nakano, Tomohisa Yoshie, Satoshi Shimizu

Publikováno v: 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).

We are concerned with the essential qualification of the Dye-Sensitized Solar Cell (DSSC) for energy harvester in the Internet of Things (IoT)'s perspectives. It would convincingly need the higher conversion efficiency, and the higher voltage, the lo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cc81d8d461bda2cab68998c8b3692d5b
https://doi.org/10.1109/imfedk48381.2019.8950729

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Control of Crystal Orientation of Ferroelectric SrBi2Ta2O9 Thin Films with Multi-Seeding Layers

Autor: Akira Hashimoto, Yoshihiro Sawada, Takeshi Hoshika, Tomohisa Yoshie, Ichiro Koiwa, Tetsuya Osaka

Publikováno v: Scopus-Elsevier

A Bi-Ta multi-seeding layer system is proposed to improve the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films prepared by a sol-gel method for applications to nonvolatile memories. For seeding layers composed of different ratios of Bi to Ta,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7669959b36e989f7ab78751119678af
https://doi.org/10.1143/jjap.39.5476

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Analysis of the degradation mechanism of Pt/SrBi2(Ta/Nb)2O9/Pt capacitors during reductive annealing

Autor: Atsushi Tofuku, Ichiro Koiwa, Yoshihiro Sawada, Tomohisa Yoshie, Hiroyo Kobayashi, Akira Hashimoto, Tetsuya Osaka

Publikováno v: Scopus-Elsevier

Degradation mechanism of the Pt/SrBi2Ta2xO9/Pt and Pt/SrBi2(Ta1−x/Nbx)2O9/Pt capacitors exposed to the hydrogen attack has been analyzed. The capacitors were fabricated from thin-films consisting of SrBi2Ta2xO9(1 ≦ × ≦ 1.1) and SrBi2(Ta1−x/N

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8f0ecda30854e4bb79c2373811f3c06
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033314309&partnerID=MN8TOARS