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pro vyhledávání: '"Tomohisa Shiino"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 267:1571-1574
Electrical properties of Si-implanted n-type GaN/AlGaN/GaN layers and contact resistances of ohmic electrodes (TiAl) formed on these layers have been examined. Experimental results have clearly shown that ohmic electrodes with a low specific-contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dd395482c2079ee1224899060003cfc
https://doi.org/10.1016/j.nimb.2009.01.133
https://doi.org/10.1016/j.nimb.2009.01.133
