Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Tomohisa Aoki"'
Autor:
Hiroaki Furukawa, Yujiro Takeda, Okada Kuniaki, Tomohisa Aoki, Seiichi Uchida, Kaoru Yamamoto, Hiromi Katoh, Keiichi Yamamoto, Kohei Tanaka, Ryo Yonebayashi, Wataru Nakamura, Kazuatsu Ito
Publikováno v:
SID Symposium Digest of Technical Papers. 51:355-358
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::775cdd06a99331607d1047eed702310c
https://doi.org/10.1002/sdtp.13877
https://doi.org/10.1002/sdtp.13877
Autor:
Seiichi Uchida, Kaoru Yamamoto, Hiroaki Furukawa, Yujiro Takeda, Hiromi Katoh, Keiichi Yamamoto, Tomohisa Aoki, Okada Kuniaki, Kohei Tanaka, Ryo Yonebayashi, Wataru Nakamura, Kazuatsu Ito
Publikováno v:
Journal of the Society for Information Display. 28:350-359
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60e63be651ac8e4f0b3eb2cac3e91e7e
https://doi.org/10.1002/jsid.888
https://doi.org/10.1002/jsid.888
Publikováno v:
Thin Solid Films. 508:44-47
Au-induced lateral crystallization of amorphous Si 1− x Ge x ( x : 0–1) on SiO 2 at a low temperature (400 °C) has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd57d4337c4d7ea053255b02a4f6b436
https://doi.org/10.1016/j.tsf.2005.07.317
https://doi.org/10.1016/j.tsf.2005.07.317
Publikováno v:
Materials Science in Semiconductor Processing. 8:79-82
Au-induced low-temperature (400 °C) crystallization of amorphous-Si1−xGex (x: 0–1) thin films on SiO2 has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μ m/h was obtained in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ed4e19c635ea3293919da6432c65b42
https://doi.org/10.1016/j.mssp.2004.09.060
https://doi.org/10.1016/j.mssp.2004.09.060
Publikováno v:
Japanese Journal of Applied Physics. 44:2405
The Au-mediated low-temperature (400°C) crystallization of amorphous-Si1-x Ge x (x: 0–1) on SiO2 has been investigated. A growth velocity exceeding 20 µm/h was obtained for samples in the entire range of Ge fractions (x: 0–1), although it decre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::577b46ce8aec65e55ad215597ac0018d
https://doi.org/10.1143/jjap.44.2405
https://doi.org/10.1143/jjap.44.2405