Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Tomohiro Nitta"'
Publikováno v:
Electrical Engineering in Japan. 174:45-50
We have attempted to develop high-performance and safe fuel cells by using ammonium formate as a solid (powder) fuel. This solid fuel has the potential of safer transportability than liquid fuels such as methanol from the viewpoint of toxicity and fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a265a6c5dd3ef3f569cb1212ca5f979
https://doi.org/10.1002/eej.21043
https://doi.org/10.1002/eej.21043
Publikováno v:
ECS Transactions. 16:849-853
We attempt to develop high-performance and safe fuel cells using ammonium formate (HCOONH4) as a solid (powder) fuel. The ammonium formate with high deliquescence can be easily supplied as a fuel through a porous film in high humidity. This solid fue
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d06e65061d84a7ae90dc9702e1110069
https://doi.org/10.1149/1.2981923
https://doi.org/10.1149/1.2981923
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 128:1600-1604
We have first attempted to develop high performance and safe fuel cells using ammonium formate as solid (powder) fuel. This solid fuel has potential to realize safe portability compared with liquid fuel such as methanol from the viewpoint of toxicity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6102bcf1a2b23e8f828d9c8853d6438
https://doi.org/10.1541/ieejeiss.128.1600
https://doi.org/10.1541/ieejeiss.128.1600
Autor:
Marina Yamaguchi, Yasunobu Saito, Tomohiro Nitta, Ichiro Omura, Yorito Kakiuchi, Wataru Saito, Kunio Tsuda
Publikováno v:
IEEE Transactions on Electron Devices. 54:1825-1830
The dynamic on-resistance increase associated with the current collapse phenomena in high-voltage GaN high-electron-mobility transistors (HEMTs) has been suppressed by employing an optimized field-plate (FP) structure. The fabricated GaN-HEMTs of 600
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a593a73777f748cd54ab70121c3e904
https://doi.org/10.1109/ted.2007.901150
https://doi.org/10.1109/ted.2007.901150
Publikováno v:
2015 15th International Superconductive Electronics Conference (ISEC).
A nano-channel with a laterally placed gate electrode was fabricated using a YBa2Cu3O7-δ film on a SrTiO3 substrate. Current-voltage curves were measured at various applied gate voltages at 4.2 K. The current increased with decreasing the gate volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36eb418ab0090599fbce3fef893a635c
https://doi.org/10.1109/isec.2015.7383453
https://doi.org/10.1109/isec.2015.7383453
Autor:
Hidetoshi Fujimoto, Yasunobu Saito, Tomohiro Nitta, Takao Noda, Wataru Saito, Masakazu Yamaguchi, Akira Yoshioka, Tetsuya Ohno, Yorito Kakiuchi
Publikováno v:
IEEE Electron Device Letters. 31:659-661
Four types of the field-plate (FP) structure were fabricated to discuss the relation between the current collapse phenomena and the electric-field peak in high-voltage GaN-HEMTs. The on -resistance increase caused by current collapse phenomena is dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6853ffeed963b2b8587743a335dcc04b
https://doi.org/10.1109/led.2010.2048741
https://doi.org/10.1109/led.2010.2048741
Autor:
Kunio Tsuda, Yasunobu Saito, Ichiro Omura, Yorito Kakiuchi, Marina Yamaguchi, Tomohiro Nitta, Wataru Saito
Publikováno v:
IEEE Electron Device Letters. 29:8-10
A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9fadf57925e9ff9a4fefaca24a2c017
https://doi.org/10.1109/led.2007.910796
https://doi.org/10.1109/led.2007.910796
Autor:
Marina Yamaguchi, Ichiro Omura, Yasunobu Saito, Yorito Kakiuchi, Tomohiro Nitta, Kunio Tsuda, Wataru Saito
Publikováno v:
IEEE Electron Device Letters. 28:676-678
The 620-V/1.4-A GaN high-electron mobility transistors on sapphire substrate were fabricated and the ON-resistance modulations caused by current collapse phenomena were measured under high applied voltage. Since the fabricated devices had insulating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e03ae963199c81c7c81ef616f41c22d
https://doi.org/10.1109/led.2007.901665
https://doi.org/10.1109/led.2007.901665
Publikováno v:
IEEE Transactions on Electron Devices. 43:2062-2067
An improved GaAs MESFET structure, named a buried p-layer lightly doped deep drain (BP-LD3) structure, is proposed. This structure can be fabricated by the conventional self-aligned gate and selective ion implantation technologies, and the FET charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d9a1b7255ca0e5637a50bb501ed0be
https://doi.org/10.1109/16.544375
https://doi.org/10.1109/16.544375
Publikováno v:
Tetsu-to-Hagane. 78:383-390
A chemical reaction at the interface between slag and metal can be analyzed as a kind of electrode reaction because of the ionic nature of liquid slag.In the present work, application of an A.C. impedance method to slag-metal reaction in iron- and st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::229c379b9280ae592f79a204f00940f8
https://doi.org/10.2355/tetsutohagane1955.78.3_383
https://doi.org/10.2355/tetsutohagane1955.78.3_383