Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tomohiro Motoyama"'
Autor:
Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara
Publikováno v:
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3378e9ae22664d34ec48e8e835e60d37
https://doi.org/10.1109/imfedk53601.2021.9637625
https://doi.org/10.1109/imfedk53601.2021.9637625
Autor:
Yoshihisa, Mori, Tomohiro, Motoyama
Publikováno v:
岡山理科大学教育実践研究. 3:5-11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::e9bd83b95db0bded61a201ac6636dc8d
http://id.nii.ac.jp/1182/00002323/
http://id.nii.ac.jp/1182/00002323/
Autor:
Low, Rui Shan, Asubar, Joel T., Baratov, Ali, Kamiya, Shunsuke, Nagase, Itsuki, Urano, Shun, Kawabata, Shinsaku, Tokuda, Hirokuni, Kuzuhara, Masaaki, Nakamura, Yusui, Naito, Kenta, Motoyama, Tomohiro, Rui, Shan Low, Joel T., Asubar, Ali, Baratov, Shunsuke, Kamiya, Itsuki, Nagase, Shun, Urano, Shinsaku, Kawabata, Hirokuni, Tokuda, Masaaki, Kuzuhara, Yusui, Nakamura, Kenta, Naito, Tomohiro, Motoyama, Zenji, Yatabe
Publikováno v:
Applied Physics Express = Applied Physics Express. 14(3):031004
We report on the fabrication and characterization of AlGaN/GaN metal-insulator-semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a 5 nm thick Al2O3 dielectric deposited by cost-effective and environmental-friendl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61df7cdc155354941faf8b74b4fce502
http://hdl.handle.net/2298/00044023
http://hdl.handle.net/2298/00044023