Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tomohiro Kuyama"'
Publikováno v:
Japanese Journal of Applied Physics. 62:SI1010
To investigate the electrical properties and degradation features of dielectric materials during plasma exposure, we developed an in situ impedance spectroscopy (IS) system. We applied the proposed system to monitor SiO2/Si structures exposed to Ar p
Quantitative evaluation of plasma-damaged SiN/Si structures using bias-dependent admittance analysis
Publikováno v:
Journal of Applied Physics. 131:133302
Plasma process-induced damage (PID) to SiN dielectric films was investigated by using an impedance (admittance)-based technique. Multi-layered equivalent circuits were introduced to assign the spatial and energy distribution of defects created in the
Publikováno v:
IRPS
We propose a method to analyze the dielectric degradation and breakdown dynamics under electrical stressing on the basis of time-resolved impedance $Z(\omega, t)$ spectra-time-dependent impedance spectroscopy (TDIS). Nyquist plots of $Z(\omega, t)$ s
Publikováno v:
Japanese Journal of Applied Physics. 59:SJJC02
Autor:
Tomohiro Kuyama, Koji Eriguchi
Publikováno v:
Japanese Journal of Applied Physics. 57:06JD03
We proposed evaluation methods of plasma-induced damage (PID) in silicon nitride (SiN) films. The formation of an oxide layer by air exposure was identified for damaged SiN films by X-ray photoelectron spectroscopy (XPS). Bruggeman's effective medium
Publikováno v:
Journal of Applied Physics; 4/7/2022, Vol. 131 Issue 13, p1-11, 11p
Publikováno v:
Japanese Journal of Applied Physics; 6/22/2020, Vol. 59 Issue SJ, p1-7, 7p