Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Tomoaki Yoshimori"'
Autor:
Hideaki Terakado, Makoto Karyu, Miyamoto Takashi, Hiroki Shirahama, Hirotsugu Ita, Yoshinori Iino, Makoto Muto, Mumenori Iwami, Tomoaki Yoshimori, Yoshie Okamoto, Shunpei Kodama, Kei Hattori, Kazuki Nakazawa, Hidehito Azumano
Publikováno v:
Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology.
We have investigated Cr film etching mechanism systematically in order to minimize CDU (CD Uniformity). As a result, employing our dry etching system ARESTM with optimized etch process we achieved an excellent CDU(3σ) (0.5nm with etch contribution).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e94319eafd036a3730096eb217900bbb
https://doi.org/10.1117/12.2502053
https://doi.org/10.1117/12.2502053
Autor:
Kei Hattori, Takashi Miyamoto, Yoshinori Iino, Shunpei Kodama, Yoshie Okamoto, Kazuki Nakazawa, Makoto Karyu, Hideaki Terakado, Hiroki Shirahama, Hirotsugu Ita, Tomoaki Yoshimori, Hidehito Azumano, Makoto Muto, Mumenori Iwami
Publikováno v:
Proceedings of SPIE; 8/23/2018, Vol. 10807, p1-6, 6p
Autor:
Hiroki Shirahama, Makoto Muto, Yoshihisa Kase, Munenori Iwami, Yoshie Okamoto, Hirotsugu Ita, Kazuki Nakazawa, Ivan Ganachev, Hidehito Azumano, Tomoaki Yoshimori
Publikováno v:
SPIE Proceedings.
We review the state-of-art and issues of dry etching of masks for nano-device photo lithography. After introducing the basics of photo-mask structures and their plasma etching, we discuss the specifics of mask etching as compared to the etching of si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::007e94762451f622a6a623d434d0f4a3
https://doi.org/10.1117/12.2073069
https://doi.org/10.1117/12.2073069
Autor:
Yoshihisa Kase, Yoshinori Iino, Tomoaki Yoshimori, Makoto Karyu, Hirotsugu Ita, Makoto Muto, Mikio Nonaka, Munenori Iwami
Publikováno v:
SPIE Proceedings.
We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ce6949ac0b1b5743c9bc9fa4af9275f
https://doi.org/10.1117/12.1000107
https://doi.org/10.1117/12.1000107
Autor:
Makoto Karyu, Hirotsugu Ita, Makoto Muto, Yoshinori Iino, Tomoaki Yoshimori, Hidehito Azumano, Mikio Nonaka
Publikováno v:
SPIE Proceedings.
ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe3245585b4a1bdc89b7ab2819d5830
https://doi.org/10.1117/12.898976
https://doi.org/10.1117/12.898976
Autor:
Makoto Karyu, Hidehito Azumano, Tomoaki Yoshimori, Yoshinori Iino, Mikio Nonaka, Hirotsugu Ita
Publikováno v:
SPIE Proceedings.
When it comes to the absorber etching of EUV (Extreme Ultra-Violet) mask, it is important to understand the mechanism of how a sidewall protection film is formed in the TaBO etching process and TaBN etching process. According to our evaluations, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ac244da171b5b00522c17c69aabd944
https://doi.org/10.1117/12.868533
https://doi.org/10.1117/12.868533