Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Tomoaki Koizumi"'
Autor:
Kei Emoto, Tomoaki Koizumi, Masaki Hirose, Masahiro Jutori, Takuya Inoue, Kenji Ishizaki, Menaka De Zoysa, Hiroyuki Togawa, Susumu Noda
Publikováno v:
Communications Materials, Vol 3, Iss 1, Pp 1-8 (2022)
Short-wavelength lasers based on wide-bandgap GaN photonic crystals are promising for high-brightness illumination and materials processing. Here, the authors develop a nano-fabrication method for GaN/air photonic crystals, achieving high lasing oper
Externí odkaz:
https://doaj.org/article/b41565c7add0458aa94be150754b648d
Publikováno v:
IEICE Transactions on Information and Systems. :1130-1137
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59d42a9994f28d56f9618cd3ec9323f9
https://doi.org/10.1587/transinf.2020lop0005
https://doi.org/10.1587/transinf.2020lop0005
Publikováno v:
ISCAS
A delta-sigma-modulation multi-channel network is proposed for an analog-to-digital converter application. Weighting coefficients at summing nodes and digital filters obtaining the final output are designed so that adding the second channel cancels t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5811195567cdd1b7cf7a444e957b972f
https://doi.org/10.1109/iscas51556.2021.9401511
https://doi.org/10.1109/iscas51556.2021.9401511
Publikováno v:
ISMVL
A cascaded delta-sigma modulator has been proposed that converts analog signals to multi-level digital outputs. The shaped quantization noise generated in the first-stage modulator is transferred to the cascaded stage, efficiently suppressing quantiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d69d57c34665dc313be1fe5b6bf8fbf
https://doi.org/10.1109/ismvl51352.2021.00042
https://doi.org/10.1109/ismvl51352.2021.00042
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Silicon photonics has attracted considerable attention inrecent years. One of the most important components basedon Si photonics is a silicon-based light emitter. Extensivestudies have been carried out on Si-based light-emittingmaterials such as SiGe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e488994ba15f1b362cc66ffd95c5f32
https://doi.org/10.7567/ssdm.2009.i-2-3
https://doi.org/10.7567/ssdm.2009.i-2-3
Publikováno v:
2008 Device Research Conference.
Room temperature 1.6 mum p+-Si/beta-FeSi2/n+-Si double heterostructures light-emitting diodes is fabricated on Si(111) substrate using molecular-beam epitaxy. The electroluminescence intensity is improved by increasing the thickness of beta-FeSi2 act
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b029fb5dcc1ece4910df8516d78df34c
https://doi.org/10.1109/drc.2008.4800852
https://doi.org/10.1109/drc.2008.4800852
Publikováno v:
Japanese Journal of Applied Physics. 49:04DG16
We have fabricated Si/β-FeSi2/Si (SFS) double-heterostructure (DH) light-emitting diodes (LEDs) on Si(111) substrates with β-FeSi2 thickness ranging from 80 nm to 1 µm, and Si0.7Ge0.3/β-FeSi2/Si0.7Ge0.3(SGFSG) DH LEDs with a 200-nm-thick β-FeSi2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c8954d8d1b8adb3475d0bf78905995d
https://doi.org/10.1143/jjap.49.04dg16
https://doi.org/10.1143/jjap.49.04dg16
Publikováno v:
Applied Physics Letters. 94:213509
Electroluminescence at an emission power of over 0.4 mW is achieved at an emission wavelength of 1.6 μm using a p-Si/β-FeSi2/n-Si double-heterostructure light-emitting diode. This emission power is obtained at room temperature under current injecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::697e858dcd63f4f209be57674b6fc655
https://doi.org/10.1063/1.3147168
https://doi.org/10.1063/1.3147168
Publikováno v:
Applied Physics Express. 1:051405
We have epitaxially grown p+-Si/β-FeSi2(8 nm)/n+-Si (SFS) light-emitting diodes (LEDs) on Si(001) substrates by molecular-beam epitaxy (MBE) using Ga-doped p+-Si layers (p~1019 cm-3). 1.6 µm electroluminescence (EL) was realized at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7adcf5e29de493ac1fcdea059fbebc11
https://doi.org/10.1143/apex.1.051405
https://doi.org/10.1143/apex.1.051405
Publikováno v:
Applied Physics Express. 1:021403
We have epitaxially grown p-Si/β-FeSi2/n-Si double heterostructures light-emitting diodes (LEDs) on Si(111) substrates by molecular-beam epitaxy. The 1.6 µm electroluminescence intensity measured at room temperature (RT) was improved significantly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5226df9b9ad5cd0bbddecb9d1e8141e
https://doi.org/10.1143/apex.1.021403
https://doi.org/10.1143/apex.1.021403