Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Tomoaki Inokuchi"'
Autor:
Yusuke Kobayashi, Tatsuya Nishiwaki, Akihiro Goryu, Tsuyoshi Kachi, Ryohei Gejo, Hiro Gangi, Tomoaki Inokuchi, Kazuto Takao
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Autor:
Ryohei Gejo, Tatsunori Sakano, Akiyo Kawakami, Takahiro Kato, Shigeaki Hayase, Tomoaki Inokuchi, Kazuto Takao
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Autor:
Tatsunori Sakano, Kento Adachi, Tomoaki Inokuchi, Kazuto Takao, Yoko Iwakaji, Ryohei Gejo, Tomoko Matsudai
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Autor:
Kouta Nakata, Kenya Kobayashi, Hiro Gangi, Tomoaki Inokuchi, Yasunori Taguchi, Hiroki Nemoto, Kazuto Takao, Yusuke Kobayashi
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
We propose a machine learning approach for power device design that consists of TCAD simulation and line Bayesian optimization. It has the advantage of multivariable optimization of field plate (FP) MOSFETs, and we thus discover an optimal structure
Autor:
Atsushi Kurobe, N. Shimomura, Tomoaki Inokuchi, Satoshi Shirotori, Yushi Kato, K. Koi, Mariko Shimizu, H. Sugiyama, Y. Ohsawa, Soichi Oikawa, Mizue Ishikawa, B. Altansargai, H. Yoda
Publikováno v:
Journal of Magnetics. 24:107-111
Autor:
H. Yoda, Y. Ohsawa, Soichi Oikawa, Atsushi Kurobe, Kazutaka Ikegami, Tomoaki Inokuchi, Satoshi Shirotori, K. Koi, Mizue Ishikawa, Mariko Shimizu, H. Sugiyama, N. Shimomura, B. Altansargai, Yushi Kato
Publikováno v:
Journal of Magnetics. 23:639-643
Autor:
Yusuke Kobayashi, Tatsuya Nishiwaki, Akihiro Goryu, Tsuyoshi Kachi, Ryohei Gejo, Hiro Gangi, Tomoaki Inokuchi, Kazuto Takao
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1047
Reducing the reverse recovery charge (Q rr) is effective for reducing switching loss in field plate (FP)-MOSFETs. A lifetime killer is utilized to reduce Q rr while increasing the leakage current in the off-state. Device simulation shows that a local
Autor:
Atsushi Kurobe, K. Koi, A. Tiwari, Yuzo Kamiguchi, Yoshiaki Saito, Satoshi Shirotori, Mizue Ishikawa, Naoharu Shimomura, Hideyuki Sugiyama, Yushi Kato, Yuichi Ohsawa, Tomoaki Inokuchi, Kazutaka Ikegami, Mariko Shimizu, Soichi Oikawa, B. Altansargai, Hiroaki Yoda
Publikováno v:
IEEE Transactions on Magnetics. 53:1-4
Voltage-control spintronics memory (VoCSM) is a spintronics-based memory that uses the voltage-control-magnetic-anisotropy (VCMA) effect as a selection method and the spin-Hall effect as a write method, and is a candidate for future nonvolatile main
Autor:
Naoharu Shimomura, Yuichi Ohsawa, Atsushi Kurobe, Hideyuki Sugiyama, K. Koi, Y. Kato, Satoshi Shirotori, Hiroaki Yoda, Soichi Oikawa, Tomoaki Inokuchi, Mariko Shimizu, B. Altansargai
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
We successfully demonstrated write tests in voltage-control spintronics memory (VoCSM) in which in-plane magnetic tunnel junctions (MTJs) with aspect ratio of about 1 (AR1) were used. Retention energy as large as that in MTJs with an aspect ratio of
Autor:
B. Altansargai, Yuichi Ohsawa, Y. Kato, S. Fujita, Satoshi Shirotori, Tomoaki Inokuchi, Susumu Takeda, Atsushi Kurobe, Soichi Oikawa, Mariko Shimizu, K. Koi, Kazutaka Ikegami, Hiroaki Yoda, Hideyuki Sugiyama, Naoharu Shimomura, Satoshi Takaya
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
We report a novel convolutional neural network (CNN) accelerator utilizing “voltage control spintronics memory” (VoCSM). High throughput processing is achieved by high speed in-“nonvolatile memory”-computation using high density VoCSM array.