Zobrazeno 1 - 10
of 158
pro vyhledávání: '"Tomoaki Hatayama"'
Autor:
Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki, Yasuhisa Sano
Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 – October 4, 2013, Miyazaki, Japan
Autor:
Yasuki Mikamura, Takeyoshi Masuda, Hisato Michikoshi, Shinsuke Harada, Tomoaki Hatayama, Yu Saito
Publikováno v:
Materials Science Forum. 1004:758-763
A 0.63 mΩcm2 / 1170 V property was demonstrated in a 4H-SiC V-groove trench MOSFET with a super junction (SJ) structure. Successful results in SJ-VMOSFETs will inspire research on 600 to 1200 V class devices as their extreme high MOS channel mobilit
Publikováno v:
Materials Science Forum. 858:269-273
The photoluminescence of the near band gap emission of 10H-SiC is revealed for the first time and detected just below 3.0 eV. The crystallinity thus polytype of the sample is controlled with transmission electron microscope analyses and Laue diffract
Autor:
Hidenori Kitai, Hiromu Shiomi, Shinaya Kyogoku, Takeyoshi Masuda, Tomoaki Hatayama, Hideto Tamaso, Shinsuke Harada, Kenji Fukuda
Publikováno v:
Materials Science Forum. 858:639-642
We have systematically investigated the trench properties of 4H-SiC for p-type channel doping level formed by epitaxial growth, crystallographic plane, and MOS interface treatment. Our results show that the channel mobilities on the (1-100), (11-20),
Publikováno v:
IEEE Transactions on Electron Devices. 62:324-332
Threshold voltage instability was investigated for 4H-SiC MOSFETs with phosphorus-doped (POCl3-annealed) and nitrided (NO-annealed) gate oxides. Threshold voltage shift observed in the bidirectional drain current–gate voltage characteristics was ev
Publikováno v:
International Journal of Hydrogen Energy. 39(10):4845-4849
Solar-to-hydrogen conversion efficiencies of water-splitting photochathodes using epitaxially grown p-type 4H-, 6H- and 3C-SiC were estimated in a two-electrode system without applying any external bias. By using electrode materials with small oxygen
Autor:
Masaya Ichimura, Keiko Miyake, Takeshi Ohshima, Tomonari Yasuda, Masashi Kato, Tomoaki Hatayama
Publikováno v:
Materials Science Forum. :503-506
The photolytic hydrogen generation using sunlight attracts attention as a next generation energy technology. A key of this technology is a selection of materials for the photolysis and SiC is one of the candidate materials for this application. The c
Autor:
Takeyoshi Masuda, Yasuki Mikamura, Yu Saitoh, Tomoaki Hatayama, Keiji Wada, Kenji Hiratsuka, Toru Hiyoshi, Masaki Furumai
Publikováno v:
Materials Science Forum. :931-934
The authors applied a thick gate oxide layer at the trench bottoms to 600 V class truncated V-groove MOSFETs of which MOS channels were formed on 4H-SiC (0-33-8) facets and validated the static and switching characteristics. The specific on-resistanc
Crystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction Methods
Publikováno v:
Materials Science Forum. :479-482
Crystallographic structures of 8H-and 10H-SiC crystals were analyzed by the Raman spectroscopy and diffraction methods. Two and four transverse-optical modes for 8H-and 10H-SiC were observed, and their values were different from those of 4H-and 6H-Si
Publikováno v:
ECS Transactions. 50:257-265
Effects of POCl3 annealing on the electrical properties of metal-oxide-semiconductor (MOS) devices on 4H-SiC were investigated. Comparative results of non-annealed, NO-annealed, and POCl3-annealed MOS devices are shown. POCl3 annealing is more effect