Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tommy Cahyadi"'
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
The Time Dependent Dielectric Breakdown (TDDB) of Ultra-Low-κ (ULK) (κ=2.7) and porous ULK SiCOH (κ=2.55) was systematically investigated using both Constant Current Stress (CCS) and Constant Voltage Stress (CVS) method on our 32nm and 28nm techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5094bfc4c1dc7852c84501935d5e4c
https://doi.org/10.1109/irps.2014.6860614
https://doi.org/10.1109/irps.2014.6860614
Publikováno v:
2009 IEEE International Integrated Reliability Workshop Final Report.
This paper discusses the process improvements for resolving gate oxide integrity (GOI) issue using the Taguchi method through reliability engineering for eliminating shallow trench isolation (STI) edge failure mode. The selected process parameters ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99221c41591da7c7270cd3cc56b6852a
https://doi.org/10.1109/irws.2009.5383016
https://doi.org/10.1109/irws.2009.5383016
Autor:
Tommy Cahyadi
The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This thesis reports on the concept of introducing sol-gel silica as solution-processa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5d53eb28b583adf7449f13af90d936b
https://hdl.handle.net/10356/13542
https://hdl.handle.net/10356/13542
