Zobrazeno 1 - 10
of 129
pro vyhledávání: '"Tomi Leinonen"'
Publikováno v:
Semiconductor Lasers and Diode-based Light Sources for Biophotonics ISBN: 9781785612725
Semiconductor disk lasers (SDLs), also known as optically pumped vertical external-cavity surface-emitting lasers (VECSELs), offer unparalleled features combining high beam quality, large wavelength coverage, multi-watt output power, narrow linewidth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::264c3efe7f71ad68dab59a1823eeec9f
https://doi.org/10.1049/pbhe007e_ch8
https://doi.org/10.1049/pbhe007e_ch8
Publikováno v:
Conference on Lasers and Electro-Optics.
We report on a frequency-doubled VECSEL emitting at 512.6 nm. The laser spectrum was narrowed with a Volume Bragg Grating and the intracavity frequency-doubling was achieved with a periodically poled MgO-doped lithium niobate.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::576240baf16de96865868cecca7ca54e
https://doi.org/10.1364/cleo_at.2018.jtu2a.17
https://doi.org/10.1364/cleo_at.2018.jtu2a.17
Publikováno v:
Conference on Lasers and Electro-Optics.
We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eb54f7fac979f5184dfc3e7a19b507c
https://doi.org/10.1364/cleo_at.2018.jtu2a.10
https://doi.org/10.1364/cleo_at.2018.jtu2a.10
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 21:480-484
The first monolithic GaAs-based vertical-external-cavity surface-emitting laser (VECSEL) operating at 1550 nm is reported. The VECSEL operation is based on a gain mirror which was grown in a single growth run by plasma-assisted molecular beam epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de415d0177c2f783aeb2412a32161522
https://doi.org/10.1109/jstqe.2015.2415200
https://doi.org/10.1109/jstqe.2015.2415200
We demonstrate a semiconductor disk laser emitting at 1275nm, employing a wafer fused AlInGaAs/InP-AlAs/GaAs gain mirror. A built-in Au-reflector was used to reflect the pump light not absorbed in a single pass through the gain chip active region. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18e98a796ec4904eff8f3b4bd6cb8362
https://trepo.tuni.fi/handle/10024/126055
https://trepo.tuni.fi/handle/10024/126055
Autor:
Emmi Kantola, Jussi-Pekka Penttinen, Ville-Markus Korpijärvi, Antti Rantamäki, Mircea Guina, Tomi Leinonen
Publikováno v:
Laser Congress 2017 (ASSL, LAC).
We demonstrate an OP-VECSEL prototype emitting more than 6W of CW output power at 625 nm. We employ dilute nitride (GaInNAs) quantum wells emitting fundamentally at 1250 nm together with intracavity frequency doubling. submittedVersion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1feaa5be6878da86f7e11022d9c0572
https://doi.org/10.1364/assl.2017.atu1a.8
https://doi.org/10.1364/assl.2017.atu1a.8
Autor:
Sandalphon, Sanna Ranta, Mircea Guina, Ryan J. Epstein, Gregory J. Fetzer, W. J. Alford, M. Tavast, N. Van Lieu, Tomi Leinonen
Publikováno v:
IEEE Journal of Quantum Electronics. 49:719-727
Optically pumped semiconductor lasers in conjunction with intra-cavity frequency conversion and tuning elements offer high continuous-wave power, narrow linewidth, and broad tunability. As a result, they are well suited to precision spectroscopic app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f84402e6c6badcb3dce45dd0ada8175
https://doi.org/10.1109/jqe.2013.2270912
https://doi.org/10.1109/jqe.2013.2270912
Autor:
Tomi Leinonen, Andrew C. Wilson, D. J. Wineland, Mircea Guina, David Allcock, Jussi-Pekka Penttinen, Daniel H. Slichter, R. Srinivas, D. Leibfried, S. C. Burd
Publikováno v:
Vertical External Cavity Surface Emitting Lasers (VECSELs) VI.
We report the development of an intracavity-frequency-doubled vertical external-cavity surface-emitting laser (VECSEL) emitting at 571 nm for photoionization of magnesium. The laser employs a V-cavity geometry with a gain chip at the end of one cavit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be58329a6ac79bbc142b15b734263b70
https://doi.org/10.1117/12.2213398
https://doi.org/10.1117/12.2213398
Autor:
Mircea Guina, Jussi-Pekka Penttinen, Alan J. Kemp, Riccardo Casula, Daniele C. Parrotta, Tomi Leinonen, Jennifer E. Hastie
Publikováno v:
Vertical External Cavity Surface Emitting Lasers (VECSELs) VI.
We report intracavity Raman conversion of a long-wavelength InGaAs-QW VECSEL to ~1320 nm, the longest wavelength yet achieved by a VECSEL-pumped Raman laser. The setup consisted of a VECSEL capable of emitting >17W at 1180nm and tunable from 1141-120
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ae08fe71707efabb4419c9b1af03a42
https://doi.org/10.1117/12.2217593
https://doi.org/10.1117/12.2217593
Autor:
Dietrich Leibfried, David Allcock, Tomi Leinonen, Robert Jördens, Micrea Guina, Andrew C. Wilson, Daniel H. Slichter, Jussi-Pekka Penttinen, R. Srinivas, S. C. Burd, David J. Wineland
Experiments in atomic, molecular, and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power, and intensity stability. Vertical external-cavity surface-emitting lasers (VECSELs),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5a6407735e37a144839d6791788aa21