Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Tomer Leitner"'
Autor:
Shekhar, Himanshu, Lami, Vincent, Solomeshch, Olga, Fenigstein, Amos, Tomer, Leitner, Becky, Lavi, Vaynzof, Yana, Tessler, Nir
Publikováno v:
In Organic Electronics April 2019 67:1-9
Publikováno v:
IEEE Transactions on Electron Devices. 66:5191-5195
A monolithic resistorless circuit has been designed for active reset of the N+P single-ended (common anode) single-photon avalanche diode (SPAD). This type of SPAD has enhanced the photon detection efficiency in the near-infrared (NIR) region relativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcce9e82553422421007a4eabc8da00b
https://doi.org/10.1109/ted.2019.2946015
https://doi.org/10.1109/ted.2019.2946015
Autor:
Yael Nemirovsky, Yitzhak Birk, Avi Shoham, Amos Fenigstein, Tomer Leitner, A. Katz, Constantine Vainstein
Publikováno v:
IEEE Sensors Journal. 19:5851-5858
We present the architecture and design of a novel $64\times64$ CMOS single-photon avalanche diode (SPAD)-based imager for gun muzzle flash detection. The imager is fabricated in a standard front side illuminated $0.18~\mu \text{m}$ CMOS image sensor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66df63460ee921bf4045aa08311251e9
https://doi.org/10.1109/jsen.2019.2904312
https://doi.org/10.1109/jsen.2019.2904312
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-11 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-11 (2020)
Organic photodiodes (OPDs) for its interesting optoelectronic properties has the potential to be utilized with complementary metal-oxide-semiconductor (CMOS) circuit for imaging, automotive, and security based applications. To achieve such a hybrid d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63a0a13aa81e1e76636cc512e311ebf3
http://europepmc.org/articles/PMC7200686
http://europepmc.org/articles/PMC7200686
Autor:
A. Katz, Yael Nemirovsky, Tomer Leitner, Amos Fenigstein, Tanya Blank, Avi Shoham, C. Vainstein, Yitzhak Birk
Publikováno v:
IEEE Transactions on Electron Devices. 65:4407-4412
We present the architecture and design of a CMOS single-photon avalanche diode (SPAD) pixel that was selected to be the basis for a gun muzzle flash detection camera. The SPAD sensor and auxiliary circuitry are fabricated in a standard $0.18-\mu \tex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84cd15f9c317affaa52ecfc244e1da87
https://doi.org/10.1109/ted.2018.2866630
https://doi.org/10.1109/ted.2018.2866630
Autor:
Thanushan Kugathasan, M. Munker, Walter Snoeys, D. Dannheim, Petra Riedler, Amos Fenigstein, Heinz Pernegger, Tomer Leitner, M. Benoit
CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low analogue po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ff9e60680b5be9b9f59f8fecfd8d120
http://arxiv.org/abs/1903.10190
http://arxiv.org/abs/1903.10190
Single Photon Avalanche Diode Collection Efficiency Enhancement via Peripheral Well-Controlled Field
Autor:
M. Javitt, Yael Nemirovsky, David Cristea, Tomer Leitner, Amos Feiningstein, Lior Gal, Vitali Savuskan
Publikováno v:
IEEE Transactions on Electron Devices. 62:1939-1945
Single-photon avalanche diodes photon detection efficiency (PDE) and breakdown uniformity are studied. An approach to increase the PDE based on controlled breakdown of the peripheral region of the junction is described. Parameters influencing and con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7a0310f6414145cc52e96a82f74c745
https://doi.org/10.1109/ted.2015.2421500
https://doi.org/10.1109/ted.2015.2421500
Autor:
Rebecca E. Coath, Amos Fenigstein, Renato Turchetta, Roshan Sellahewa, Tomer Leitner, Steven Chick
Publikováno v:
IEEE Transactions on Electron Devices. 61:2725-2731
Single photon avalanche diodes (SPADs) in CMOS are becoming increasingly interesting devices for timing applications, such as fluorescence lifetime imaging, positron emission tomography, and time of flight mass spectroscopy. The CMOS allows integrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44f8ac004fafd5abcd5283e76473646c
https://doi.org/10.1109/ted.2014.2332068
https://doi.org/10.1109/ted.2014.2332068
Autor:
S. Chick, Igor Brouk, Vitali Savuskan, Sharon Bar-Lev, M. Javitt, Yael Nemirovsky, Renato Turchetta, Lior Gal, Gil Visokolov, Rebecca E. Coath, A. Feiningstein, Tomer Leitner
Publikováno v:
IEEE Transactions on Electron Devices. 60:1982-1988
This paper presents the key features of single photon avalanche diode (SPAD) devices fabricated in a low voltage commercial 180-nm CMOS image sensor technology exhibiting very low dark count rate (DCR). The measured DCR is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d38a9e83d85ae142809de34ad625eb1
https://doi.org/10.1109/ted.2013.2259172
https://doi.org/10.1109/ted.2013.2259172