Zobrazeno 1 - 10
of 86
pro vyhledávání: '"Tombros, N."'
Autor:
Guimarães, M. H. D., Zomer, P. J., Ingla-Aynés, J., Brant, J. C., Tombros, N., van Wees, B. J.
Publikováno v:
Phys. Rev. Lett. 113, 086602 (2014)
We experimentally study the electronic spin transport in hBN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation t
Externí odkaz:
http://arxiv.org/abs/1406.4656
We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mob
Externí odkaz:
http://arxiv.org/abs/1403.0399
Autor:
van Elferen, H. J., Veligura, A., Tombros, N., Kurganova, E. V., van Wees, B. J., Maan, J. C., Zeitler, U.
Publikováno v:
Phys. Rev. B 88, 121302(R) (2013)
Magneto-transport experiments on ABC-stacked suspended trilayer graphene reveal a complete splitting of the twelve-fold degenerated lowest Landau level, and, in particular, the opening of an exchange-driven gap at the charge neutrality point. A quant
Externí odkaz:
http://arxiv.org/abs/1304.0866
Autor:
Castellanos-Gomez, A., Arramel, Wojtaszek, M., Smit, R. H. M., Tombros, N., Agraït, N., van Wees, B. J., Rubio-Bollinger, G.
Publikováno v:
Bolet\'in del Grupo Espa\~nol del Carb\'on, 25 pp.18-22 (2012)
We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate interaction in gr
Externí odkaz:
http://arxiv.org/abs/1210.4147
We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm${^2}$V$^{-1}$s$^{-1}$. We could observe spin transport over lengths up to 20 {\mu}m at room temperature, the largest distanc
Externí odkaz:
http://arxiv.org/abs/1209.1999
Autor:
Guimarães, M. H. D., Veligura, A., Zomer, P. J., Maassen, T., Vera-Marun, I. J., Tombros, N., van Wees, B. J.
We measure spin transport in high mobility suspended graphene (\mu ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (\tau_s ~ 150 ps) and spin relaxation length (\lambda_s=4.7
Externí odkaz:
http://arxiv.org/abs/1207.1572
Publikováno v:
Rhys. Rev. B (2012)
We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few k$\Omega$s in the high carrier density regime to several M$\Omega$s around the charge neutrality point (CNP). The corresp
Externí odkaz:
http://arxiv.org/abs/1202.1753
Autor:
Vera-Marun, I. J., Zomer, P. J., Veligura, A., Guimarães, M. H. D., Visser, L., Tombros, N., van Elferen, H. J., Zeitler, U., van Wees, B. J.
Publikováno v:
Appl. Phys. Lett. 102, 013106 (2013)
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present h
Externí odkaz:
http://arxiv.org/abs/1112.5462
Autor:
van Elferen, H. J., Veligura, A., Kurganova, E. V., Zeitler, U., Maan, J. C., Tombros, N., Vera-Marun, I. J., van Wees, B. J.
Publikováno v:
Phys. Rev. B 85, 115408 (2012)
We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher f
Externí odkaz:
http://arxiv.org/abs/1112.5368
We present electronic transport measurements of single- and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm^2/V/s at room temperature and 275 000 cm^2/V/s at 4.2 K. The excellent quality
Externí odkaz:
http://arxiv.org/abs/1110.1045