Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Tomasz Sochacki"'
Autor:
Piotr Jaroszynski, Michal Dabrowski, Petro Sadovy, Michal Bockowski, Robert Czernecki, Tomasz Sochacki
Publikováno v:
Materials, Vol 17, Iss 14, p 3446 (2024)
The focus of this study was the investigation of how the total pressure of reactants and ammonia flow rate influence the growth morphology of aluminum–gallium nitride layers crystallized by Halide Vapor Phase Epitaxy. It was established how these t
Externí odkaz:
https://doaj.org/article/864495dd1eaf4461b6520880963832d5
Autor:
Tomasz Sochacki, Robert Kucharski, Karolina Grabianska, Jan L. Weyher, Magdalena A. Zajac, Malgorzata Iwinska, Lutz Kirste, Michal Bockowski
Publikováno v:
Materials, Vol 16, Iss 9, p 3360 (2023)
A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topogra
Externí odkaz:
https://doaj.org/article/0628956d7a414d38b3768e198db8cab9
Autor:
Lutz Kirste, Thu Nhi Tran Thi Caliste, Jan L. Weyher, Julita Smalc-Koziorowska, Magdalena A. Zajac, Robert Kucharski, Tomasz Sochacki, Karolina Grabianska, Malgorzata Iwinska, Carsten Detlefs, Andreas N. Danilewsky, Michal Bockowski, José Baruchel
Publikováno v:
Materials, Vol 15, Iss 19, p 6996 (2022)
In this paper, we investigate, using X-ray Bragg diffraction imaging and defect selective etching, a new type of extended defect that occurs in ammonothermally grown gallium nitride (GaN) single crystals. This hexagonal “honeycomb” shaped defect
Externí odkaz:
https://doaj.org/article/c4eb818e34b0454bb1285c95955c0cb4
Autor:
Tomasz Sochacki, Robert Kucharski, Karolina Grabianska, Jan L. Weyher, Malgorzata Iwinska, Michal Bockowski, Lutz Kirste
Publikováno v:
Materials, Vol 15, Iss 13, p 4621 (2022)
In this paper, a detailed investigation of the basic ammonothermal growth process of GaN is presented. By analyzing the crystallization on a native seed with a lenticular shape, thus with an intentionally varying off-cut, we wanted to answer some bas
Externí odkaz:
https://doaj.org/article/489c4a39924d4da081c6c1a875701c59
Autor:
Karolina Grabianska, Robert Kucharski, Tomasz Sochacki, Jan L. Weyher, Malgorzata Iwinska, Izabella Grzegory, Michal Bockowski
Publikováno v:
Crystals, Vol 12, Iss 4, p 554 (2022)
The results of basic ammonothermal crystallization of gallium nitride are described. The material is mainly analyzed in terms of the formation of stress (called stress-induced polarization effect) and defects (threading dislocations) appearing due to
Externí odkaz:
https://doaj.org/article/30fb347f853a47eb925003a9f1bb6352
Autor:
Mikolaj Amilusik, Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Kumar Somakumar, Andrzej Suchocki, Michal Bockowski
Publikováno v:
Materials, Vol 15, Iss 7, p 2379 (2022)
Co-doping with manganese and carbon was performed in gallium nitride grown by halide vapor phase epitaxy method. Native seeds of high structural quality were used. The crystallized material was examined in terms of its structural, optical, and electr
Externí odkaz:
https://doaj.org/article/d4e34109fe704004b8c9dc2b3e5f1992
Autor:
Lutz Kirste, Karolina Grabianska, Robert Kucharski, Tomasz Sochacki, Boleslaw Lucznik, Michal Bockowski
Publikováno v:
Materials, Vol 14, Iss 19, p 5472 (2021)
X-ray topography defect analysis of entire 1.8-inch GaN substrates, using the Borrmann effect, is presented in this paper. The GaN wafers were grown by the ammonothermal method. Borrmann effect topography of anomalous transmission could be applied du
Externí odkaz:
https://doaj.org/article/fb37959c524b4ece8a3222190bdf666d
Autor:
Karolina Grabianska, Tomasz Sochacki, Michal Bockowski, M. Iwinska, Boleslaw Lucznik, M. Amilusik, Robert Kucharski
Publikováno v:
Wide Bandgap Semiconductors for Power Electronics. :529-554
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35b6016f05c88e7a5123c1a55b435f80
https://doi.org/10.1002/9783527824724.ch18
https://doi.org/10.1002/9783527824724.ch18
Autor:
Tomasz Sochacki
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5512a380b2ee111934d1f6f32866a706
https://doi.org/10.1117/12.2607701
https://doi.org/10.1117/12.2607701
Autor:
Igor Prozheev, Malgorzata Iwinska, Tomasz Sochacki, Michal Bockowski, René Bès, Filip Tuomisto
Publikováno v:
physica status solidi (b). :2200568
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca435c7aa32a1e0ca63f1229a79888f0
https://doi.org/10.1002/pssb.202200568
https://doi.org/10.1002/pssb.202200568