Výsledky vyhledávání - "Tomasz Sledziewski"

Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors

Autor: Holger Schlichting, Tobias Erlbacher, Anton J. Bauer, Tomasz Sledziewski

Publikováno v: Materials Science Forum. 963:763-767

Production yield is a major factor for semiconductor device manufacturing. To produce high performance devices cost efficiently, it is important to know the process windows of the implemented production technology. This can influence the yield in dif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19f693b14a26eb4b10fd84b8b3f5790c
https://doi.org/10.4028/www.scientific.net/msf.963.763

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Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFET

Autor: Lingyan Sheng, Tobias Erlbacher, Li Zheng, Shaoyu Liu, Yuehui Yu, Tomasz Sledziewski, Xinhong Cheng

The transition region between the active area and the edge termination of silicon carbide (SiC) MOSFET is either used to place a poly-silicon gate runner (G-MOS) or electrically contacted to the source potential (S-MOS), which is studied experimental

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e9c8069944c9f30110c419e9471ddd2
https://publica.fraunhofer.de/handle/publica/263801

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Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices

Autor: Mattias Tschiesche, Anton J. Bauer, J. Weiße, Martin Hauck, Tomasz Sledziewski, Michael Krieger, Heinz Mitlehner, Tobias Erlbacher, Lothar Frey

Publikováno v: Materials Science Forum. 924:184-187

In this work, we analyze compensating defects which are formed after implantation of aluminum (Al) into n-type 4H-SiC epitaxial layers and subsequent thermal annealing. These defects reduce the expected free charge carrier density by 84% for a low do

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4fbfe85f70a6a94970dce0cb68c55636
https://doi.org/10.4028/www.scientific.net/msf.924.184

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SiC MOSFET with a self-aligned channel defined by shallow source-JFET implantation: A simulation study

Autor: Tomasz Sledziewski, Tobias Erlbacher

A new concept for SiC MOSFET with a self-aligned channel is presented. The channel is defined by shallow source-JFET implantation into a counter-doped layer. This concept is verified by TCAD device simulations. It is shown that the method is applicab

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80f4ad20ff4bac5248b42aaf07a192b7

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Doping of 4H-SiC with Group IV Elements

Autor: Theresa Palm, Michael Krieger, Michel Bockstedte, Maximilian Rühl, Tomasz Sledziewski, Gunter Ellrott, Heiko B. Weber

Publikováno v: Materials Science Forum. 858:301-307

Germanium (Ge) doping of 4H silicon carbide (SiC) has recently attracted attention because a conductivity-enhancing effect was reported. In this work, we report on an experimental and theoretical approach to elucidate this effect. Ge and tin (Sn) –

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c11059d0852512718868eb553566cc2
https://doi.org/10.4028/www.scientific.net/msf.858.301

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Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers

Autor: Michael Krieger, Thierry Chassagne, Marcin Zielinski, Marilena Vivona, Alexandra Gkanatsiou, Fabrizio Roccaforte, Tomasz Sledziewski, Patrick Fiorenza

Publikováno v: Materials science forum 858 (2016): 663–666. doi:10.4028/www.scientific.net/MSF.858.663
info:cnr-pdr/source/autori:M. Vivona 1, P. Fiorenza 1, T. Sledziewski 2, A. Gkanatsiou 3, M. Krieger 2, T. Chassagne 4, M. Zielinski 4, F. Roccaforte 1/titolo:Processing and characterization of MOS capacitors fabricated on 2°-off axis 4H-SiC epilayers/doi:10.4028%2Fwww.scientific.net%2FMSF.858.663/rivista:Materials science forum/anno:2016/pagina_da:663/pagina_a:666/intervallo_pagine:663–666/volume:858

In this work, the electrical properties of SiO2/SiC interfaces onto a 2°-off axis 4H-SiC layer were studied and validated through the processing and characterization of metal-oxide-semiconductor (MOS) capacitors. The electrical analyses on the MOS c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23593010a960a6166a5b516675f0ca77
https://doi.org/10.4028/www.scientific.net/msf.858.663

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Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO2 Interfaces

Autor: Heiko B. Weber, Michael Krieger, Tomasz Sledziewski

Publikováno v: Materials Science Forum. 858:697-700

In this work the effect of phosphorus on the electrical properties of n-type 4H-SiC MOS capacitors is studied. Phosphorus ions are implanted into the epitaxial layers prior to the deposition of SiO2 by PECVD, in shallow depths and at concentrations a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::61a263dcb8e4e390da4b00b080608291
https://doi.org/10.4028/www.scientific.net/msf.858.697

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Dose Dependent Profile Deviation of Implanted Aluminum in 4H-SiC During High Temperature Annealing

Autor: Anton J. Bauer, Matthias Kocher, Mathias Rommel, Volker Häublein, Tomasz Sledziewski

Publikováno v: 2018 22nd International Conference on Ion Implantation Technology (IIT).

The influence of the high temperature annealing on differently implanted Al profiles was investigated by SIMS measurements. Depending on the implanted dose and also depending on the local concentration a significant diffusion of the implanted Al was

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::292eaf63a91adecb165645b41841486c
https://doi.org/10.1109/iit.2018.8807904

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