Zobrazeno 1 - 10
of 154
pro vyhledávání: '"Tomasz Brozek"'
Autor:
Linrong Yang, Runling Li, Ikai Hsu, Haiqiong Zhang, Jiadong Ren, Wenzhan Zhou, Linlin Sun, Yawen Xue, Wenchao Yang, Ruilin Zhang, Yefang Zhu, Yan Zhang, Guifeng Zhang, Yingying Fu, Shan Yin, Yujie Jia, Bo Yu, Tomasz Brozek
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 870-875 (2022)
Interconnect development for the new technology node requires coordinated efforts of multiple module teams working to co-optimize patterning and metallization solutions to meet performance and yield, and reliability targets. This paper presents the r
Externí odkaz:
https://doaj.org/article/26c2208734614b1b96900b34bfa627cc
Autor:
Tomasz Brozek, Dennis Ciplickas
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1248-1257 (2019)
Emerging non-volatile memories are becoming increasingly attractive for embedded and storage-class applications. Among the development challenges of Back-End integrated memory cells are long learning cycles and high wafer cost. We propose a short-flo
Externí odkaz:
https://doaj.org/article/ceb13829926e40c885a463aa3f26b928
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1bbe689f50e6689e5325f368c05bb48
https://doi.org/10.1117/12.2660862
https://doi.org/10.1117/12.2660862
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8335a66c84c6749fbb654feff87e10
https://doi.org/10.1117/12.2614261
https://doi.org/10.1117/12.2614261
Autor:
Runling Li, I-Kai Hsu, Tomasz Brozek, Linrong Yang, Debiao He, Fangrui Wu, Jiadong Ren, Yefang Zhu, Yan Zhang, Pei Liu, Haiqiong Zhang, Guifeng Zhang, Yingying Fu, Shan Yin, Yujie Jia, Bo Yu
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bf20cd64e3faf36a0ad8b391543c125
https://doi.org/10.1117/12.2613633
https://doi.org/10.1117/12.2613633
Autor:
Fangrui Wu, Linrong Yang, Runling Li, Chiung-Han Ye, Haiqiong Zhang, Ikai Hsu, Tomasz Brozek, Bo Yu
Publikováno v:
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1e6237aef7066c53ba5419b3f436808
https://doi.org/10.1109/asmc54647.2022.9792513
https://doi.org/10.1109/asmc54647.2022.9792513
Autor:
Sharad Saxena, Christopher Hess, Michele Quarantelli, Alberto Piadena, Larg Weiland, Rakesh Vallishayee, Yuan Yu, Dennis Ciplickas, Tomasz Brozek, Andrzej Strojwas
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::868c4eacabb3d967dbab166d5cc4cb26
https://doi.org/10.1109/ectc51906.2022.00121
https://doi.org/10.1109/ectc51906.2022.00121
Autor:
Stephen Lam, Christopher Hess, Larg Weiland, Matthew Moe, Xumin William Shen, John Chen, Indranil De, Marcin Strojwas, Tomasz Brozek
Publikováno v:
2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::027c64ed898352bea5444e9f217de04d
https://doi.org/10.1109/icmts50340.2022.9898254
https://doi.org/10.1109/icmts50340.2022.9898254
Autor:
Andrzej J. Strojwas, Tomasz Brozek, Kelvin Doong, Indranil De, Xumin William Shen, Marcin Strojwas
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6162a4a0cf966db4771f3524a53e0466
https://doi.org/10.1109/edtm53872.2022.9798308
https://doi.org/10.1109/edtm53872.2022.9798308
Autor:
Roberto Gonella, Tomasz Brozek, Meindert Lunenborg, J.-C. Giraudin, Christopher Hess, B. Martinet, Franck Arnaud, Laurent Garchery, Kelvin Doong, Christian Dutto
Publikováno v:
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
FDSOI technology has been proposed as an alternative device scaling path which offers benefits of tunable, superior electrostatics transistor while maintaining simplicity of planar integration. New device type and integration elements brought up chal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a72e8b73807c533b30a2107a5789d234
https://doi.org/10.1109/s3s46989.2019.9320727
https://doi.org/10.1109/s3s46989.2019.9320727