Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Tomasz Andrearczyk"'
Autor:
Oksana Yastrubchak, Nataliia Tataryn, Lukasz Gluba, Sergii Mamykin, Janusz Sadowski, Tomasz Andrearczyk, Jaroslaw Z. Domagala, Olga Kondratenko, Volodymyr Romanyuk, Olena Fedchenko, Yaryna Lytvynenko, Olena Tkach, Dmitry Vasilyev, Sergey Babenkov, Katerina Medjanik, Katarzyna Gas, Maciej Sawicki, Tadeusz Wosinski, Gerd Schönhense, Hans-Joachim Elmers
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-13 (2023)
Abstract The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural properties has been studied. Epitaxial (Ga,Mn)(Bi,As) layers of high structural per
Externí odkaz:
https://doaj.org/article/4e457f981bd0410e941bf5fab96403d5
Autor:
Tomasz Andrearczyk, Khrystyna Levchenko, Janusz Sadowski, Katarzyna Gas, Andrei Avdonin, Jerzy Wróbel, Tadeusz Figielski, Maciej Sawicki, Tadeusz Wosinski
Publikováno v:
Materials, Vol 16, Iss 2, p 788 (2023)
The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic semiconductor on its magnetic and electromagnetic properties is studied in very thin layers of quaternary (Ga,Mn)(Bi,As) compound grown on a GaAs substra
Externí odkaz:
https://doaj.org/article/9f323f73e65c4832bef3128fd5658931
Publikováno v:
Materials, Vol 14, Iss 16, p 4483 (2021)
We have thoroughly investigated the planar Hall effect (PHE) in the epitaxial layers of the quaternary compound (Ga,Mn)(Bi,As). The addition of a small amount of heavy Bi atoms to the prototype dilute ferromagnetic semiconductor (Ga,Mn)As enhances si
Externí odkaz:
https://doaj.org/article/207267877ecd4a298a961fddc3a1820d
Autor:
Tomasz Andrearczyk, Khrystyna Levchenko, Janusz Sadowski, Jaroslaw Z. Domagala, Anna Kaleta, Piotr Dłużewski, Jerzy Wróbel, Tadeusz Figielski, Tadeusz Wosinski
Publikováno v:
Materials, Vol 13, Iss 23, p 5507 (2020)
Structural analysis of epitaxial layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor (DMS), together with investigations of their magnetotransport properties, has been thoroughly performed. The obtained results are compared with tho
Externí odkaz:
https://doaj.org/article/19d26e6dc827439687972ef4ae657baf
Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The magnetizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d350d48e0541e8f42b7036fecc3cd6d
Publikováno v:
Materials
Volume 14
Issue 16
Materials, Vol 14, Iss 4483, p 4483 (2021)
Volume 14
Issue 16
Materials, Vol 14, Iss 4483, p 4483 (2021)
We have thoroughly investigated the planar Hall effect (PHE) in the epitaxial layers of the quaternary compound (Ga,Mn)(Bi,As). The addition of a small amount of heavy Bi atoms to the prototype dilute ferromagnetic semiconductor (Ga,Mn)As enhances si
Autor:
Leszek Kowalczyk, K. Levchenko, T. Figielski, R. Kuna, Janusz Sadowski, Tomasz Andrearczyk, Michał Szot, Jaroslaw Z. Domagala, Tadeusz Wosinski
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 30:825-829
Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie tempe
Autor:
Jaroslaw Z. Domagala, Janusz Sadowski, Tomasz Andrearczyk, T. Figielski, Tadeusz Wosinski, K. Levchenko
Publikováno v:
physica status solidi c. 12:1152-1155
Structural and magnetic properties of thin films of the (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. High-resolution X-ray diffractio
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 51:128-134
Valence-band structure and magnetic properties, especially magnetic anisotropies, in the (Ga,Mn)As diluted ferromagnetic semiconductor are shortly discussed. Next, magneto-resistive, cross-like nanostructures fabricated by electron-beam lithography p
Autor:
A. Makosa, Tadeusz Wosinski, Janusz Sadowski, Tomasz Andrearczyk, Tadeusz Figielski, Jerzy Wróbel, Iwona Krogulec
Publikováno v:
physica status solidi (b). 248:1587-1591
Cross-like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabricated using electron-beam lithography patterning. Nanostructures of different orientations with respect to the crystallographic axes of the parent (Ga