Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Tom Seidel"'
Autor:
Christoph Adelmann, Sven Van Elshocht, Ghassan Barbar, C. Lohe, Thierry Conard, Stefan De Gendt, Barry O'Sullivan, Tom Seidel, P. Lehnen, Z. Karim, O. Boissière, Tom Schram, L.-A. Ragnarsson
Publikováno v:
ECS Transactions. 11:557-567
Atomic Vapor Deposition (AVD®) and MOCVD of TaCN-based films are studied for high work function needed for PMOS Gate-first designs. Work functions as high as 4.85eV and 4.92eV are achieved on HfSiON and HfSiO high k dielectrics, respectively. The fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90756562d2700f7d69640b5e52e646bc
https://doi.org/10.1149/1.2779590
https://doi.org/10.1149/1.2779590
Autor:
Peter Baumann, C. Lohe, Z. Karim, Woong Park, Johannes Lindner, Zhihong Zhang, Sasangan Ramanathan, P. Lehnen, Christian Manke, Tom Seidel, Olivier Biossiere, Jeremie J. Dalton
Publikováno v:
ECS Transactions. 3:363-374
We have investigated metal gate electrodes for use with high k HfSiOx gate dielectric films using AVD® and ALD technology. First, we report on the characterization of the AVD® and ALD deposition techniques where both HfO2 and SiO2 are combined for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::320409b6331fff16f1e9aec5f4159231
https://doi.org/10.1149/1.2355727
https://doi.org/10.1149/1.2355727
Publikováno v:
Microelectronic Engineering. 30:11-15
SEMATECH has been cited as an innovative leader and model for industry cooperation from its beginnings. From 1987 to the present, we have demonstrated that an industry and government partnership can be successful. The semiconductor industry has worke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be3a5e6e01ddf32022b02b3b6e4a0683
https://doi.org/10.1016/0167-9317(95)00185-9
https://doi.org/10.1016/0167-9317(95)00185-9
Autor:
Tom Seidel, J. McCormick, H. Y. Kim, Sasangan Ramanathan, Yoshi Senzaki, B. Lu, Z. Karim, Hugo Silva, Johannes Lindner, G.Y. Kim, Martin Daulesberg
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
Atomic Layer Deposition (ALD) has successfully been applied to advanced microelectronic applications importantly for conformal coatings on high aspect ratio devices. However, traditional ALD is limited in deposition rate because the ability to bring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c81bb8f605d80a6fa01cc27bea53ce0
https://doi.org/10.1109/icsict.2008.4734795
https://doi.org/10.1109/icsict.2008.4734795
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
Atomic layer deposition (ALD) has emerged as an enabling thin film deposition technology for making semiconductor devices with design rules below 100nm, especially when conformal coatings on high aspect ratio devices are needed. However, ALD is limit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51aa6fc1b04e28f6148280f0327e8894
https://doi.org/10.1109/icsict.2006.306294
https://doi.org/10.1109/icsict.2006.306294
Autor:
M. Boleslawski, Jong-Ho Lee, Ha Jin Lim, Byung-ki Kim, Sasangan Ramanathan, Hyung-Suk Jung, Sung Kee Han, Jong Pyo Kim, Yunseok Kim, N. K Lee, G. Irvine, Youngsu Chung, Nae In Lee, Tom Seidel, Jae-Eun Park, Seok-Joo Doh, Jung Hyoung Lee, Ho-Kyu Kang, H. Y. Kim, Hyeung-Ho Lee
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
We have successfully developed a process for ALD HfSiO/sub x/ that can provide excellent compositional control by using new Si precursors, Si/sub 2/Cl/sub 6/ (HCDS) and SiH[(CH/sub 3/)/sub 2/]/sub 3/ (tDMAS). In addition, comparisons of electrical pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c83382c8f2939c7f3180f56bb67227b
https://doi.org/10.1109/iedm.2004.1419203
https://doi.org/10.1109/iedm.2004.1419203
Autor:
Tom Seidel
Publikováno v:
Nietzscheforschung. 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::834136eb5dda00383dfd64d180fd7ee4
https://doi.org/10.1524/nifo.2000.7.jg.243
https://doi.org/10.1524/nifo.2000.7.jg.243
Autor:
Zia Karim, Ghassan Barbar, Olivier Boissière, Peer Lehnen, Christoph Lohe, Tom Seidel, Christoph Adelmann, Thierry Conard, Barry O'Sullivan, Lars-Aåke Ragnarsson, Sven Van Elshocht, Stefan De Gendt
Publikováno v:
ECS Meeting Abstracts. :1164-1164
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3db6c7dd4c4c0e0e0c17724e503c857f
https://doi.org/10.1149/ma2007-02/20/1164
https://doi.org/10.1149/ma2007-02/20/1164
Publikováno v:
ECS Meeting Abstracts. :1062-1062
In this work we discuss the design requirements for achieving higher productivity ALD solutions and we present a single-wafer reactor design that incorporates improvement elements. The effectiveness of this approach is evaluated by examining the impr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b3a9306886545340efc1fcd05471409
https://doi.org/10.1149/ma2006-02/21/1062
https://doi.org/10.1149/ma2006-02/21/1062
Autor:
Zia Karim, Olivier Biossiere, Christoph Lohe, Zhihong Zhang, Woong Park, Christian Manke, Peter K. Baumann, Jeremie Dalton, Sasangan Ramanathan, Johannes Lindner, Tom Seidel
Publikováno v:
ECS Meeting Abstracts. :1125-1125
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d469b62f3b54d64e4904aed48153a3b
https://doi.org/10.1149/ma2006-02/22/1125
https://doi.org/10.1149/ma2006-02/22/1125