Zobrazeno 1 - 10
of 195
pro vyhledávání: '"Tom Schram"'
Autor:
Luca Panarella, Ben Kaczer, Quentin Smets, Stanislav Tyaginov, Pablo Saraza Canflanca, Andrea Vici, Devin Verreck, Tom Schram, Dennis Lin, Theresia Knobloch, Tibor Grasser, César Lockhart de la Rosa, Gouri S. Kar, Valeri Afanas’ev
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract Evidence of microscopic inhomogeneities of the side source/drain contacts in 300 mm wafer integrated MoS2 field-effect transistors is presented. In particular, the presence of a limited number of low Schottky barrier spots through which chan
Externí odkaz:
https://doaj.org/article/4dc4c462dd604865a0278a59c121b370
Autor:
Azrif B. Manut, Jian Fu Zhang, Meng Duan, Zhigang Ji, Wei Dong Zhang, Ben Kaczer, Tom Schram, Naoto Horiguchi, Guido Groeseneken
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 15-21 (2016)
For nanometer MOSFETs, charging and discharging a single trap induces random telegraph noise (RTN). When there are more than a few traps, RTN signal becomes complex and appears as within a device fluctuation (WDF). RTN/WDF causes jitters in switch ti
Externí odkaz:
https://doaj.org/article/f776b6bf276f4192bd9ccd77104c6dbf
Autor:
Steven Brems, Souvik Ghosh, Quentin Smets, Marie-Emmanuelle Boulon, Andries Boelen, Koen Kennes, Hung-Chieh Tsai, Francois Chancerel, Clement Merckling, Pieter-Jan Wyndaele, Jean-Francois De Marneffe, Tom Schram, Pawan Kumar, Stefanie Sergeant, Thomas Nuytten, Stefan De Gendt, Henry Medina Silva, Benjamin Groven, Pierre Morin, Gouri Sankar Kar, César Lockhart De la Rosa, Didit Yudistira, Joris Van Campenhout, Inge Asselberghs, Alain Phommahaxay
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbbbfb500f3632e1fef09b85aeb6972
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134381
Autor:
Stenfan Kubicek, Tom Schram, Joseph Ervin, Benjamin Vincent, Raghu Hathwar, Jerome Mitard, Eugenio Dentoni Litta, Sylvain Baudot, Mattan Kamon, Steven Demuynck, Thomas Chiarella, Yong Kong Siew, S. A. Chew
Publikováno v:
IEEE Transactions on Electron Devices. 67:5374-5380
A new methodology is demonstrated to assess the impact of fabrication inherent process variability on 14-nm fin field effect transistor (FinFET) device performance. A model of a FinFET device was built using virtual device fabrication and testing. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c13ec0f302c55a87ceac2021c171179a
https://doi.org/10.1109/ted.2020.3027528
https://doi.org/10.1109/ted.2020.3027528
Autor:
Quentin Smets, Tom Schram, Devin Verreck, Daire Cott, Benjamin Groven, Zubair Ahmed, Ben Kaczer, Jerome Mitard, Xiangyu Wu, Souvik Kundu, Hans Mertens, Dunja Radisic, Arame Thiam, Waikin Li, Emmanuel Dupuy, Zheng Tao, Kevin Vandersmissen, Thibaut Maurice, Dennis Lin, Pierre Morin, Inge Asselberghs, Iuliana Radu
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::918faa104e7bdd0bf709a2f04f69ed2d
https://doi.org/10.1109/iedm19574.2021.9720517
https://doi.org/10.1109/iedm19574.2021.9720517
Autor:
Pierre Morin, Benjamin Groven, Henry Medina, Yuanyuan Shi, Vladislav Voronenkov, Iryna Kandybka, Annelies Delabie, Dries Vranckx, Brecht De Vos, Sebastiaan Nijs, Thibaut Maurice, Daire Cott, Sreetama Banerjee, Quentin Smets, Tom Schram, Xiangyu Wu, Dennis Lin, Inge Asselberghs
Publikováno v:
ECS Meeting Abstracts. :822-822
Two dimensional ultrathin layers are considered promising materials to bring new functionalities in nanotechnologies and candidate to replace 3D materials in existing applications. Among this last category, transition metal dichalcogenides (TMDC) lik
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b56b8b5b54a5481b8cc964ca60ab3e8
https://doi.org/10.1149/ma2022-0215822mtgabs
https://doi.org/10.1149/ma2022-0215822mtgabs
Publikováno v:
Advanced Materials. 34:2109796
Large-area 2D-material-based devices may find applications as sensor or photonics devices or can be incorporated in the back end of line (BEOL) to provide additional functionality. The introduction of highly scaled 2D-based circuits for high-performa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ea0a9d3c863baf117a45ff64b8099fa
https://doi.org/10.1002/adma.202109796
https://doi.org/10.1002/adma.202109796
Autor:
Elyse Hambacher, Dan Lord, Thomas Higginbotham, Beth S. Fornauf, Tom Schram, Kathryn McCurdy, Emilie Mitescu Reagan
Publikováno v:
Teaching and Teacher Education. 80:83-93
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::056081f2e99f046db2bd23e7a80bdeb1
https://doi.org/10.1016/j.tate.2018.12.005
https://doi.org/10.1016/j.tate.2018.12.005
Autor:
E. Dupuy, Steven Brems, Devin Verreck, P. Morin, Cedric Huyghebaert, Goutham Arutchelvan, D. Radisic, Alain Phommahaxay, A. Thiam, Abhinav Gaur, Tom Schram, Matty Caymax, Koen Kennes, Katia Devriendt, Quentin Smets, W. Li, Inge Asselberghs, Thibaut Maurice, Iuliana Radu, Aryan Afzalian, Benjamin Groven, J-F de Marneffe, D. Lin, Daire J. Cott
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Double gated WS 2 transistors with gate length down to 18 nm are fabricated in a 300mm Si CMOS fab. By using large statistical data sets and mapping uniformity on full 300mm wafer, we built an integration vehicle where impact of each process step can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10f06bb0ae65bdc27f13c5df6895fabf
https://doi.org/10.1109/iedm13553.2020.9371926
https://doi.org/10.1109/iedm13553.2020.9371926
Autor:
Tom Schram, Naoto Horiguchi, Dimitri Linten, D. Boudier, Lars-Ake Ragnarsson, Cor Claeys, Geert Hellings, Hiroaki Arimura, Eddy Simoen, Bogdan Cretu, Harold Dekkers, Bertrand Parvais
Publikováno v:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
The low-frequency noise of input-output (I/O) FinFETs with 3.5 nm and 5nm SiO 2 gate dielectric is studied for different processing conditions. For the thin dielectric a high-pressure (HP) deuterium anneal can improve the noise Power Spectral Density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1741fbbbaf1f234e3d1f0e94e537054
https://doi.org/10.1109/icsict49897.2020.9278221
https://doi.org/10.1109/icsict49897.2020.9278221