Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Tom Oder"'
Publikováno v:
Journal of Vacuum Science & Technology A. 39:033412
We report on the properties of gallium oxide (Ga2O3) thin films deposited on c-plane sapphire substrates using radio frequency magnetron sputtering under various conditions. The parameters varied included the composition of the deposition gas, the su
Publikováno v:
Journal of Electronic Materials. 43:1370-1378
The properties of ZnO thin films codoped with lithium and phosphorus have been characterized. The films were deposited from high-purity ZnO and Li3PO4 solid targets onto c-plane sapphire substrates by radiofrequency (RF) magnetron sputtering. A subst
Publikováno v:
MRS Proceedings. 1494:77-82
Thin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a
Publikováno v:
Advances in Materials Science for Environmental and Energy Technologies V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39b6e65714d785562021febd7e64c359
https://doi.org/10.1002/9781119323624.ch13
https://doi.org/10.1002/9781119323624.ch13
Publikováno v:
Journal of Electronic Materials. 38:772-777
High-temperature processing was used to improve the barrier properties of three sets of n-type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum average barrier height of 1.78 eV and an ideality factor of 1.09 using
Publikováno v:
Journal of Electronic Materials. 36:805-811
We report on improved electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type 4H-SiC at temperatures between 20°C and 800°C. The Schottky barrier heights (SBHs) determined by current-voltage measurements increased
Publikováno v:
MRS Proceedings. 1805
We report the investigation of ZnO thin films delta-doped with lithium and phosphorus introduced simultaneously. The films were deposited from high purity ceramic targets of ZnO and Li3PO4 on c-plane sapphire substrates by RF magnetron sputtering. An
Publikováno v:
MRS Proceedings. 1731
ZnO thin films were synthesized by radio-frequency (RF) magnetron sputtering of high purity ZnO solid targets on sapphire substrates. Depositions were carried out at selected temperatures between 293 K and 1173 K, and post-deposition annealing was pe
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125311-125311-8 (2017)
Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 oC for up to 60 hours in
Autor:
James H. Andrews, Tom Oder, James Tancabel, Connor Hetzel, Cameron Bagheri, Kenneth D. Singer, Joshua Petrus, Eric Baer, Cory Merlo, Michael Crescimanno, Chuanhong Zhou
We describe the formation, characterization and theoretical understanding of microlenses comprised of alternating polystyrene and polymethylmethacrylate layers produced by multilayer coextrusion. These lenses are fabricated by photolithography, using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aca0f86b1457346325799a49623b973f
http://arxiv.org/abs/1501.00036
http://arxiv.org/abs/1501.00036