Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Tom Gabert"'
Autor:
Jack Pekarik, Peng Cheng, Peter B. Gray, Tom Gabert, David L. Harame, Joe Hasselbach, B. Leidy, Renata Camillo-Castillo, James Adkisson, Q.Z. Liu, Christa R. Willets, John J. Ellis-Monaghan, Vibhor Jain, Dae-Gyu Park, Kevin K. Chan, Jeff Gambino, John J. Benoit, Marwan H. Khater, Matt Tiersch, Bjorn Zetterlund
Publikováno v:
ECS Transactions. 50:121-127
A self-aligned sacrificial emitter (SASE) process has been successfully developed in a BiCMOS technology. Selective epitaxy of SiGe originally developed for sub-100 nm CMOS nodes is used for a raised extrinsic base. Process integration includes build
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a83feee984d4b34eae9b051eb842f481
https://doi.org/10.1149/05009.0121ecst
https://doi.org/10.1149/05009.0121ecst
