Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Tom Davenport"'
Autor:
Tom Davenport, Jim Euchner
Publikováno v:
Research-Technology Management. 66:11-15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1f5b85fbe79f1323c5005ed0d5a61c1
https://doi.org/10.1080/08956308.2023.2142435
https://doi.org/10.1080/08956308.2023.2142435
Elgar Advanced Introductions are stimulating and thoughtful introductions to major fields in the social sciences, business and law, expertly written by the world's leading scholars. Designed to be accessible yet rigorous, they offer concise and lucid
Autor:
Allen Barnett, Douglas Kirkpatrick, Christiana Honsberg, Duncan Moore, Mark Wanlass, Keith Emery, Richard Schwartz, Dave Carlson, Stuart Bowden, Dan Aiken, Allen Gray, Sarah Kurtz, Larry Kazmerski, Myles Steiner, Jeffery Gray, Tom Davenport, Roger Buelow, Laszlo Takacs, Narkis Shatz, John Bortz, Omkar Jani, Keith Goossen, Fouad Kiamilev, Alan Doolittle, Ian Ferguson, Blair Unger, Greg Schmidt, Eric Christensen, David Salzman
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aafdc02d80c84faf8891e761c4a709d
https://doi.org/10.4324/9781315793245-49
https://doi.org/10.4324/9781315793245-49
Autor:
Greg Schmidt, Duncan T. Moore, Keith W. Goossen, Mark Wanlass, John C. Bortz, Daniel J. Aiken, Douglas Kirkpatrick, Stuart Bowden, Lawrence L. Kazmerski, David Salzman, Ian T. Ferguson, D.E. Carlson, Sarah Kurtz, J.L. Gray, A. Doolittle, Laszlo A. Takacs, Keith Emery, Eric R. Christensen, Omkar Jani, Christiana B. Honsberg, Tom Davenport, Roger F. Buelow, Fouad Kiamilev, Allen Barnett, Blair L. Unger, Narkis E. Shatz, Richard G. Schwartz, Myles A. Steiner, Allen L. Gray
Publikováno v:
Progress in Photovoltaics: Research and Applications. 17:75-83
The Very High Efficiency Solar Cell (VHESC) program is developing integrated optical system–PV modules for portable applications that operate at greater than 50% efficiency. We are integrating the optical design with the solar cell design, and have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c27f71f61611d9ce069bb0c8c0b4671d
https://doi.org/10.1002/pip.852
https://doi.org/10.1002/pip.852
Publikováno v:
Integrated Ferroelectrics. 48:161-169
The requirements for future ferroelectric non-volatile memories (FRAM) include lower operating voltages, higher densities and tighter design rules. In order to achieve these requirements the key component of the FRAM device, viz., the PbZr x Ti 1 m x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d01050917f37b8e0bacfa07843c5392f
https://doi.org/10.1080/713718315
https://doi.org/10.1080/713718315
Publikováno v:
Integrated Ferroelectrics. 36:43-52
Lower operating voltage is one of the main requirements of future generation FRAM. In order to achieve this requirement, PLZT thin film capacitors must be scaled down with respect to thickness. This paper presents the ferroelectric performance of sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc0afa12d77ede43e929474f709e78d7
https://doi.org/10.1080/10584580108015526
https://doi.org/10.1080/10584580108015526
Autor:
Tom Davenport, Sanjay Mitra
Publikováno v:
Integrated Ferroelectrics. 31:213-231
Ferroelectric memories have been firmly established commercially over the past decade. This paper presents the process variations used by Ramtron for its portion of the worldwide FRAM output and discusses the reasons why the particular process was ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cade92576ca02c945b9cfe1ed06cabd
https://doi.org/10.1080/10584580008215655
https://doi.org/10.1080/10584580008215655
Publikováno v:
Journal of American Folklore. 113:200-203
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10ec9339c60cd8ae2e427abc7531309b
https://doi.org/10.2307/541291
https://doi.org/10.2307/541291
Publikováno v:
Integrated Ferroelectrics. 27:271-277
This study seeks to determine the feasibility and suitability of SBTN as a ferroelectric material used in the semiconductor wafer fabrication process. While Ramtron has years of experience producing PZT based parts, one vision for the future is that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::857d6fde17b24d7d41683cd731bfc4c1
https://doi.org/10.1080/10584589908228474
https://doi.org/10.1080/10584589908228474