Zobrazeno 1 - 10
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pro vyhledávání: '"Tomé, M"'
Publikováno v:
Journal of Physics: Condensed Matter 36, 185701 (2024)
In this work we predict a family of noncentrosymmetric two-dimensional (2D) Weyl semimetals composed by porous Ge and SiGe structures. These systems are energetically stable graphenylene-like structures with a buckling, spontaneously breaking the inv
Externí odkaz:
http://arxiv.org/abs/2305.05756
Publikováno v:
Journal of Applied Physics 133, 115105 (2023)
We have investigated magnetic interactions between transition metal ions in bismuthene topological insulator with protected edge states. We find that these topological states have a crucial role on the magnetic interactions in 2D topological insulato
Externí odkaz:
http://arxiv.org/abs/2210.14658
We study the properties of flat-bands that appear in a heterostructure composed of strands of different widths of graphene armchair nanoribbons. One of the flat-bands is reminiscent of the one that appears in pristine armchair nanoribbons and has its
Externí odkaz:
http://arxiv.org/abs/2202.00742
Autor:
Tomé, M., Rosales, H. D.
Publikováno v:
Phys. Rev. B 103, 020403 (2021)
The topological Hall effect (THE), given by a composite of electric and topologically non-trivial spin texture is commonly observed in magnetic skyrmion crystals. Here we present a study of the THE of electrons coupled to antiferromagnetic Skyrmion l
Externí odkaz:
http://arxiv.org/abs/2009.12233
Autor:
Lima, Erika N., da Rosa, Andreia L., Pontes, Renato. B., Silva, Mauricio C., Schmidt, Tome M., Frauenheim, Th.
We perform first-principles calculations of electronic and dielectric properties of bismuthene functionalized with small ligands using first-principle calculations. We show that all functionalized structures have topological insulating (TI) behavior
Externí odkaz:
http://arxiv.org/abs/2004.04554
Autor:
Schmidt, Tome M., Srivastava, G. P.
Whereas SnTe is a inverted band gap topological crystalline insulator, the topological phase of the alloy Sn_{1-x}In_xTe, a topological superconductor candidate, has not been clearly studied so far. Our calculations show that the Sn_{1-x}In_xTe band
Externí odkaz:
http://arxiv.org/abs/1908.05967
Akademický článek
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Autor:
Costa, M., Costa, A. T., Freitas, Walter A., Schmidt, Tome M., Nardelli, M. Buongiorno, Fazzio, A.
We have performed a systematic investigation of the formation of topologically protected boundary states (TPBS) in topological/normal insulators (TI/NI) heterostructures. Using a recently developed scheme to construct {\it ab-initio} tight-binding Ha
Externí odkaz:
http://arxiv.org/abs/1803.08587
By stacking PbTe layers there is a non-monotonic topological phase transition as a function of the number of monolayers. Based on first principles calculations we find that the proper stacked crystal symmetry determines the topological nature of the
Externí odkaz:
http://arxiv.org/abs/1711.01967
Publikováno v:
In Revista Española de Medicina Nuclear e Imagen Molecular (English Edition) July-August 2021 40(4):222-228