Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Tomáš Matlocha"'
Autor:
Michal Urbánek, Miroslav Kolíbal, Radek Duda, Jan Čechal, Petr Bábor, Tomáš Šikola, Tomáš Matlocha, Stanislav Průša
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 269:369-373
A combination of dynamic secondary ion mass spectroscopy (DSIMS) and time-of-flight low-energy ion scattering (TOF-LEIS) has been applied to acquire a composition depth profile of MoSi multilayers. During the sequential Ar+ sputtering secondary ions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55486a3c087bb7fa2323c2b704c9050e
https://doi.org/10.1016/j.nimb.2010.11.087
https://doi.org/10.1016/j.nimb.2010.11.087
Autor:
Daniel Primetzhofer, Miroslav Kolíbal, Tomáš Matlocha, Petr Bábor, S.N. Markin, Tomáš Šikola, Stanislav Průša, Peter Bauer
Publikováno v:
Surface Science. 604:1906-1911
A classical dynamics simulation of the low energy He+ ion scattering on a Cu(100) surface was carried out for a more detailed explanation of LEIS azimuthal scans with respect to a previous work. The Thomas-Fermi–Moliere screened potential was used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bace504a55b27fb4ceee7969c4f4fb2c
https://doi.org/10.1016/j.susc.2010.07.026
https://doi.org/10.1016/j.susc.2010.07.026
Autor:
Josef Polčák, O. Tomanec, Miroslav Kolíbal, Tomáš Šikola, Jan Čechal, Tomáš Matlocha, Petr Dub, Radek Kalousek
Publikováno v:
Thin Solid Films. 517:1928-1934
Deposition and oxidation of metallic gallium droplets on Si(111) were studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks – Ga 3d and Ga 2p – were simultaneously measured in order to get an advantage of different inelast
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef39f2db29b41792965a00c22b27930d
https://doi.org/10.1016/j.tsf.2008.10.011
https://doi.org/10.1016/j.tsf.2008.10.011
Publikováno v:
Nanotechnology. 22(10)
In this paper focused ion beam milling of very shallow nanostructures in silicon and germanium by low energy Ga + ions is studied with respect to ion beam and scanning parameters. It has been found that, using low energy ions, many scanning artefacts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9f8105b905ea025f59cd40290fdf194
https://pubmed.ncbi.nlm.nih.gov/21289410
https://pubmed.ncbi.nlm.nih.gov/21289410
Autor:
Tomas Matlocha, Filip Krizek
Publikováno v:
Acta Polytechnica CTU Proceedings, Vol 14, Iss 0, Pp 21-26 (2018)
The U-120M cyclotron at the Nuclear Physics Institute (NPI) of the Czech Academy of Sciences in Rez is used for radiation hardness tests of electronics for high-energy physics experiments. These tests are usually carried out with proton fluxes of the
Externí odkaz:
https://doaj.org/article/140b63fecd5f4f7db2d28f768a5bb494
Autor:
Tomas Matlocha
Publikováno v:
Acta Polytechnica CTU Proceedings, Vol 4, Iss 0, Pp 50-55 (2016)
This paper proposes a method to obtain very low beam current on the injection side of an particle accelerator. By using a combination of a well known ion source type and a short photo-emissive laser pulse, very low amount of ions can be created. The
Externí odkaz:
https://doaj.org/article/32d9e2558c0e44008ab02723cd15362d