Zobrazeno 1 - 10
of 284
pro vyhledávání: '"Tokuyuki Teraji"'
Autor:
Yuta Masuyama, Chikara Shinei, Shuya Ishii, Hiroshi Abe, Takashi Taniguchi, Tokuyuki Teraji, Takeshi Ohshima
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)
Abstract Color centers in wide band-gap semiconductors, which have superior quantum properties even at room temperature and atmospheric pressure, have been actively applied to quantum sensing devices. Characterizing the quantum properties of the colo
Externí odkaz:
https://doaj.org/article/761cdb9e19fe4d119a6f33803dc06bc7
Autor:
Keigo Arai, Akihiro Kuwahata, Daisuke Nishitani, Ikuya Fujisaki, Ryoma Matsuki, Yuki Nishio, Zonghao Xin, Xinyu Cao, Yuji Hatano, Shinobu Onoda, Chikara Shinei, Masashi Miyakawa, Takashi Taniguchi, Masatoshi Yamazaki, Tokuyuki Teraji, Takeshi Ohshima, Mutsuko Hatano, Masaki Sekino, Takayuki Iwasaki
Publikováno v:
Communications Physics, Vol 5, Iss 1, Pp 1-10 (2022)
Causes of heart failure can be investigated by tracing imperfections in electrical current propagation on the millimetre scale; however, the spatial resolution of current magnetocardiograph methods are limited to the centimetre-scale. Here, the autho
Externí odkaz:
https://doaj.org/article/6d0562fdf44f4630b9ed8b7c4b0dc5fa
Autor:
Moriyoshi Haruyama, Shinobu Onoda, Taisei Higuchi, Wataru Kada, Atsuya Chiba, Yoshimi Hirano, Tokuyuki Teraji, Ryuji Igarashi, Sora Kawai, Hiroshi Kawarada, Yu Ishii, Ryosuke Fukuda, Takashi Tanii, Junichi Isoya, Takeshi Ohshima, Osamu Hanaizumi
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
There is an extensive literature discussing the potential applications of individual nitrogen vacancy centres but some proposed developments require the use of multiple, coupled defects. Here the authors demonstrate a method to fabricate coupled nitr
Externí odkaz:
https://doaj.org/article/2c57252a2dd14cffa491aeedecf61041
Publikováno v:
IEEE Transactions on Electron Devices. 70:2199-2203
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d73f17328f66fa9a1180b6c5171bf72
https://doi.org/10.1109/ted.2023.3256349
https://doi.org/10.1109/ted.2023.3256349
Autor:
Taisuke Kageura, Yosuke Sasama, Chikara Shinei, Tokuyuki Teraji, Keisuke Yamada, Shinobu Onoda, Yamaguchi Takahide
Publikováno v:
Carbon. 192:473-481
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::493395f44a4702558281884d7936e5e0
https://doi.org/10.1016/j.carbon.2022.01.027
https://doi.org/10.1016/j.carbon.2022.01.027
Publikováno v:
Physical Review A. 107
Geometric effects can play a pivotal role in streamlining quantum manipulation. We demonstrate a geometric diabatic control, that is, perfect tunneling between spin states in a diamond by a quadratic sweep of a driving field. The field sweep speed fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9109fb4e7926216e79d24b5e9e94c7e6
https://doi.org/10.1103/physreva.107.053113
https://doi.org/10.1103/physreva.107.053113
Autor:
Tokuyuki Teraji, Chikara Shinei
Publikováno v:
Journal of Applied Physics. 133
Controllability of nitrogen doping, types of nitrogen-related defects, and their charge states in homoepitaxial diamond (001) crystals were investigated. For these purposes, 15N-doped 12C-enriched free-standing chemical vapor deposited diamond (001)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0d413f058cbd5cb59084b22ad5f8da7
https://doi.org/10.1063/5.0143652
https://doi.org/10.1063/5.0143652
Autor:
Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide
Publikováno v:
APL Materials, Vol 6, Iss 11, Pp 111105-111105-8 (2018)
Diamond is a wide bandgap semiconductor that can work at high temperatures and resist very high electric fields. It endures harsh environments through its physical stability and conducts heat very well. These properties make diamond suitable for the
Externí odkaz:
https://doaj.org/article/8068a06d5363460284a7f197cfe9f1fb
Publikováno v:
IEEE Transactions on Electron Devices. 68:3963-3967
Boron-doped diamond (B-diamond) metal–oxide–semiconductor (MOS) capacitor and MOS field-effect transistor (MOSFET) are fabricated on a flat diamond epitaxial layer. Their electrical properties and thermal stabilities after annealing at 500 °C ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50e991a1bb7ad263ca791b37b596b309
https://doi.org/10.1109/ted.2021.3087115
https://doi.org/10.1109/ted.2021.3087115
Publikováno v:
Journal of the Physical Society of Japan; 8/15/2023, Vol. 92 Issue 8, p1-9, 9p