Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Tokuro Ozawa"'
Autor:
Shin Yamada, Hiroaki Ito, Yohei Sato, Toshihiko Fujiwara, Kunio Imaizumi, Takeshi Yokoyama, Noriyuki Yamawaki, Nobuyuki Hasegawa, Tokuro Ozawa, Shinji Yuda
Publikováno v:
Proceedings of the International Display Workshops. :280
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98e214a559d077801f2b8e42cfaa1989
https://doi.org/10.36463/idw.2022.0280
https://doi.org/10.36463/idw.2022.0280
Autor:
Tokuro Ozawa, Ching Huan Lin, Yi Ting Chen, Yi-Fen Lan, Po Hsun Chen, Chia Che Hung, Bo Shiang Tseng, Chin Tang Chuang, Ching Lang Hung, Hsiang Yuan Hsieh, Norio Sugiura, Fang Cheng Yu, Tzu I. Tsao, Ching Hsiang Lin, Pu Jung Huang, Ya Ting Lin, Chia Ting Hsieh, Min Yao Lu, Chih-Lung Lin, Cheng Yeh Tsai, Chia-Wei Kuo, Ze Yu Yen
Publikováno v:
SID Symposium Digest of Technical Papers. 48:482-485
We propose a novel pixel circuit using source-follower structure to be independent of frequency effect of blue-phase liquid crystal displays (BPLCDs). Simulation results indicated that required gray-level-voltages across the BPLC could be achieved ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::973c28e9262eb0d954f358afb239bcf0
https://doi.org/10.1002/sdtp.11660
https://doi.org/10.1002/sdtp.11660
Autor:
Chia-Wei Kuo, Yu-Sheng Huang, Koji Aoki, Chuncheng Cheng, Akito Yoshikawa, Chih-Che Kuo, Tokuro Ozawa, Tokiyoshi Matsuda, Mutsumi Kimura, Ying-Ying Chen, Chun-Pin Fan, Takaaki Matsumoto
Publikováno v:
IEEE Electron Device Letters. 38:1143-1145
Magnetoresistive (MR) sensors made with amorphous In-Ga-Zn-O (a-IGZO) that have significant conventional or inverse MR effects at room temperature were fabricated. A high-temperature a-IGZO MR thin-film transistor exhibited a giant inverse MR effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02b9b230afc9e1c1bf947a54b8d02208
https://doi.org/10.1109/led.2017.2721422
https://doi.org/10.1109/led.2017.2721422
Autor:
Takaaki Matsumoto, Chih-Che Kuo, Tokuro Ozawa, Mutsumi Kimura, Koji Aoki, Tokiyoshi Matsuda, Akito Yoshikawa
Publikováno v:
IEEE Transactions on Electron Devices. :1-3
We have analyzed the Hall effect in a thin-film transistor. First, we investigated the dependence of the Hall voltage on the gate voltage. In the subthreshold region, a relatively large Hall voltage is generated regardless of the magnetic field. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::917996e81318bf639ed52f6b88d374d3
https://doi.org/10.1109/ted.2016.2573843
https://doi.org/10.1109/ted.2016.2573843
Autor:
Tokiyoshi Matsuda, Tokuro Ozawa, Akito Yoshikawa, Takaaki Matsumoto, Koji Aoki, Mutsumi Kimura, Chih-Che Kuo
Publikováno v:
2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We have analyzed Hall effect in a thin-film transistor by actual experiments and device simulation. Particularly in this presentation, we show the sensitivity dependence on the applied voltage. These behaviors can be explained by the electric field i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43d1b4e67b5c2f0bfd98a07553f5a3b5
https://doi.org/10.1109/imfedk.2017.7998064
https://doi.org/10.1109/imfedk.2017.7998064
Autor:
Chih-Che Kuo, Tokiyoshi Matsuda, Tokuro Ozawa, Akito Yoshikawa, Mutsumi Kimura, Koji Aoki, Takaaki Matsumoto
Publikováno v:
The Journal of the Institute of Image Information and Television Engineers. 69:J227-J229
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c058c1768e7d4fa561b2eaf3c1a1c75
https://doi.org/10.3169/itej.69.j227
https://doi.org/10.3169/itej.69.j227
Autor:
Hiroshi Sera, Tsukasa Eguchi, Eiji Kanda, Tokuro Ozawa, Takao Miyazawa, Tomotaka Matsumoto, Yasunori Hiyoshi
Publikováno v:
SID Symposium Digest of Technical Papers. 38:1097-1100
We have developed a 1300-dpi optical image sensor using a hydrogenated amorphous silicon (a-Si:H) pin diode array driven by low-temperature polycrystalline silicon (LTPS) thin film transistors (TFT) on a glass substrate. This paper describes a new ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a17589dd41db1a310f0afa915cb757c
https://doi.org/10.1889/1.2785498
https://doi.org/10.1889/1.2785498
Autor:
Akito Yoshikawa, Miyamura Shogo, Chih-Che Kuo, Koji Aoki, Tokiyoshi Matsuda, Tokuro Ozawa, Takaaki Matsumoto, Haruki Shiga, Mutsumi Kimura
Publikováno v:
2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We fabricated a p-type poly-Si thin-film transistor with Hall terminals and evaluated the Hall voltage by applying gate voltage, drain voltage, and magnetic field. We found that the Hall voltage is dependent on the magnetic field when the gate voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92eb530e76c832cfe7218fd9c4ad8e21
https://doi.org/10.1109/imfedk.2015.7158558
https://doi.org/10.1109/imfedk.2015.7158558
Autor:
Tokiyoshi Matsuda, Yohei Yamaguchi, Koji Aoki, Tokuro Ozawa, Daiki Tadokoro, Chih-Che Kuo, Akito Yoshikawa, Mutsumi Kimura
Publikováno v:
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbbbd7f2fd486c90e00ba07a3eb414f2
https://doi.org/10.1109/imfedk.2014.6867077
https://doi.org/10.1109/imfedk.2014.6867077
Autor:
Tomotaka Matsumoto, Yasunori Hiyoshi, Yasushi Tsuchiya, Tsukasa Eguchi, Eiji Kanda, Takahiro Iwashita, Tokuro Ozawa, Takao Miyazawa, Taketo Chino
Publikováno v:
Journal of the Society for Information Display. 17:79
— An active-matrix capacitive sensor for use in AMLCDs as an in-cell touch screen has been developed. Pixel sensor circuits are embedded in each pixel by using low-temperature polycrystalline-silicon (LTPS) TFT technology. It detects a change in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ca9468cd526d1cee064330572c5f783
https://doi.org/10.1889/jsid17.2.79
https://doi.org/10.1889/jsid17.2.79