Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tokuji Yokomatsu"'
Publikováno v:
Sensors & Materials; 2024, Vol. 36 Issue 8, Part 3, p3465-3477, 13p
Autor:
Kazusuke Maenaka, Hiroyuki Tajima, Sunao Shimomoto, Takeshi Komino, Akihiro Kameda, Tokuji Yokomatsu, Jun-ichi Yamada
Publikováno v:
The Journal of Physical Chemistry C. 125:14940-14946
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1895151e50cac433cdf930557abcd64
https://doi.org/10.1021/acs.jpcc.1c02665
https://doi.org/10.1021/acs.jpcc.1c02665
Autor:
Kazusuke Maenaka, Hiroyuki Tajima, Toshiaki Tanimura, Sunao Shimomoto, Takeshi Komino, Tomofumi Kadoya, Tokuji Yokomatsu
Publikováno v:
The Journal of Physical Chemistry C. 125:1990-1998
This study investigates the charge injection barrier at the phthalocyanine (H2Pc)/Pd using accumulated charge measurement (ACM). Because the hole injection barrier is relatively small, the voltage ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e681294474e4ed329f07cee94ea3c29b
https://doi.org/10.1021/acs.jpcc.0c04974
https://doi.org/10.1021/acs.jpcc.0c04974
Autor:
Kazusuke Maenaka, Akinari Ogino, Yuta Miyamoto, Tokuji Yokomatsu, Yuka Ikemoto, Tomofumi Kadoya, Hiroyuki Tajima, Takeshi Komino, Toshiaki Tanimura
Publikováno v:
Organic Electronics. 74:251-257
Accumulated charge measurement (ACM) is a new experimental technique for organic semiconductors to evaluate the charge injection barrier at the semiconductor–metal interface directly using a metal–insulator–semiconductor–metal (MISM) capacito
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7c8f7da30b00203c094444b47b8f0c2
https://doi.org/10.1016/j.orgel.2019.07.009
https://doi.org/10.1016/j.orgel.2019.07.009
Autor:
Kazusuke Maenaka, Hiroyuki Tajima, Tokuji Yokomatsu, Seiichi Sato, Jun-ichi Yamada, Tomofumi Kadoya, Masato Otsuka, Akinari Ogino
Publikováno v:
The Journal of Physical Chemistry C. 121:2882-2888
The charge-injection barrier from metal electrodes to thin-film pentacene is investigated using accumulated charge measurements. When a gold electrode is deposited on a pentacene film, the interface forms a Schottky contact with a hole-injection barr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d99d7d60259a2f81900737ee7832e5a8
https://doi.org/10.1021/acs.jpcc.6b12215
https://doi.org/10.1021/acs.jpcc.6b12215
Autor:
Kensuke Kanda, Takayuki Fujita, Kohei Higuchi, Kazusuke Maenaka, Haruka Takeuchi, Tokuji Yokomatsu, Yoshikazu Miyagawa
Publikováno v:
ICETET
To realize extremely low-power consuming sensor systems, a SOHI (Silicon on Honeycomb Insulator) wafer, which has ultra-small parasitic capacitance, is proposed and an accelerometer is fabricated to demonstrate use of the technique. In case of using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c92d3b6528848248b37700fcb2d17da6
https://doi.org/10.1109/icetet.2012.21
https://doi.org/10.1109/icetet.2012.21
Autor:
Kazusuke Maenaka, Takayuki Fujita, Kohei Higuchi, Haruka Takeuchi, Kensuke Kanda, Yoshikazu Miyagawa, Tokuji Yokomatsu
Publikováno v:
SMC
In this paper, fabrication method of acceleration sensor with low parasitic capacitance is descried. By using Silicon on Honeycomb Insulator (SOHI) wafer as a base material instead of Silicon on insulator (SOI) wafer, parasitic capacitance has reduce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbf1cc456f1cada55a4d3eba4be9c8a4
https://doi.org/10.1109/icsmc.2012.6378043
https://doi.org/10.1109/icsmc.2012.6378043