Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Tokuhisa Ohiwa"'
Publikováno v:
Journal of the Vacuum Society of Japan. 53:429-434
High rate deep Si etching using SF6/O2 gas chemistry by Magnetically-Enhanced Reactive Ion Etch (MERIE) system using a Dipole-Ring Magnet (DRM) is studied. It is capable of etching holes 40 μm in diameter in a Si substrate at etch rates as high as 5
Autor:
Hisataka Hayashi, Itsuko Sakai, Akihiro Kojima, Tokuhisa Ohiwa, Keisuke Kikutani, Akio Ui, Takashi Ohashi, Junko Abe
Publikováno v:
Japanese Journal of Applied Physics. 47:8026-8029
By using a stacked mask process (S-MAP) with spun-on-carbon (SOC) film, 38 nm line patterns were successfully etched by controlling the ion energy using high-bias-frequency dual-frequency-superimposed (DFS) rf capacitively coupled plasma in combinati
Autor:
Tsuyoshi Shibata, Yasuhiko Sato, Junko Abe, Eishi Shiobara, Hisataka Hayashi, Yasunobu Onishi, Tokuhisa Ohiwa, Daizo Kishigami
Publikováno v:
Japanese Journal of Applied Physics. 42:6605-6609
A novel stacked-mask process (S-MAP) was developed for sub-130-nm etching. The S-MAP consists of a tri-layer with a top layer of thin resist for patterning, a spin-on-glass (SOG) interlayer, and a newly developed spun-on carbon-film bottom layer. The
Publikováno v:
Journal of the Surface Finishing Society of Japan. 53:823-827
Autor:
Yasuhiko Sato, Yasunobu Onishi, Tokuhisa Ohiwa, Takayo Hachiya, Tsuyoshi Shibata, Mayumi Kasai, Hisataka Hayashi, Eishi Shiobara, Kentaro Matsunaga, Junko Abe
Publikováno v:
Journal of Photopolymer Science and Technology. 14:439-443
Dry etch resistance and antireflective performance were studied for a spun-on carbon film containing 90.4wt% of carbon. The refractive index of the spun-on carbon film at KrF wavelength (248nm) is n=2.17, k=0.37 and that at ArF wavelength (193nm) is
Autor:
Tokuhisa Ohiwa, Yasunobu Onishi, Yasuyuki Taniguchi, Hisataka Hayashi, Hirokazu Kato, Junko Abe, Itsuko Sakai
Publikováno v:
Japanese Journal of Applied Physics. 46:4286-4288
Using a stacked mask process (S-MAP) with spun-on carbon (SOC) film, 56 nm line and space patterns of SiO2 were successfully etched. It was found that deformation of the SOC line pattern which occurred at line dimensions under 60 nm during SiO2 react
Autor:
Katsumi Yamamoto, Itsuko Sakai, Akio Ui, Tokuhisa Ohiwa, Hisataka Hayashi, Takeshi Kaminatsui, Keisuke Kikutani
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 34:031301
For the precise control of the ion energy in reactive ion etching (RIE), a 1-MHz pulsed-direct current (DC) square-wave-superimposed (p-DCS) 100-MHz radio frequency (RF) capacitively coupled plasma (CCP) is studied and compared with a 13.56- and 100-
Autor:
Hisataka Hayashi, Tokuhisa Ohiwa, Hirokazu Kato, Shinichi Ito, Keisuke Kikutani, Yuriko Seino, Yasunobu Oonishi, Katsutoshi Kobayashi, Seiro Miyoshi, Koutaro Sho, Junko Abe
Publikováno v:
Advances in Resist Materials and Processing Technology XXV.
The stacked-mask process (S-MAP) is a tri-level resist process by lithography and dry etching, which consists of thin resist, spin-on-glass (SOG), and spun-on carbon (SOC). However, as design rules progress below 60nm, two problems arise in the conve
Autor:
Tokuhisa Ohiwa, Hideto Matsuyama, Seiro Miyoshi, Junko Abe, Hideo Ichinose, Yasunobu Onishi, Eishi Shiobara, Yasuhiko Sato, Yoshikawa Sawako, Shuzi Hayase, Yoshihiko Nakano
Publikováno v:
SPIE Proceedings.
Application of polysilanes for a deep UV (DUV) bottom anti- reflective coating (BARC), in order to resolve the problem posed by the insufficient anti-reflection with thin conventional organic BARC applied on transparent dielectric film, is described.
Autor:
Akio Ui, Hisataka Hayashi, Itsuko Sakai, Takeshi Kaminatsui, Tokuhisa Ohiwa, Katsumi Yamamoto, Keisuke Kikutani
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May/Jun2016, Vol. 34 Issue 3, p031301-1-031301-6, 6p