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pro vyhledávání: '"Tokle, E. Y."'
Autor:
Richarz, L., Skogvoll, I. C., Tokle, E. Y., Hunnestad, K. A., Ludacka, U., He, J., Bourret, E., Yan, Z., van Helvoort, A. T. J., Schultheiß, J., Selbach, S. M., Meier, D.
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D nature of t
Externí odkaz:
http://arxiv.org/abs/2412.03691
