Zobrazeno 1 - 10
of 140
pro vyhledávání: '"Tokiyoshi Matsuda"'
Autor:
Yuta Takishita, Masaki Kobayashi, Kazuki Hattori, Tokiyoshi Matsuda, Sumio Sugisaki, Yasuhiko Nakashima, Mutsumi Kimura
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035112-035112-4 (2020)
A memristor property of an amorphous Sn–Ga–O (α-TGO) thin-film device deposited using a mist chemical-vapor-deposition (mist-CVD) method has been found. The α-TGO device can be manufactured at a low cost because it does not include rare metals
Externí odkaz:
https://doaj.org/article/df763d89af4243e79b53b809c1e3f9ca
Autor:
Mutsumi Kimura, Yuki Koga, Hiroki Nakanishi, Tokiyoshi Matsuda, Tomoya Kameda, Yasuhiko Nakashima
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 100-105 (2018)
We have succeeded in utilizing In-Ga-Zn-O (IGZO) thin-film devices as synapse elements in a neural network. The electrical conductance is regarded as the connection strength, and the continuous change by flowing electrical current is employed as the
Externí odkaz:
https://doaj.org/article/9d3490f40bf44bfd875789753f144722
Autor:
Mutsumi Kimura, Kazuki Kojima, Tomonori Mukuda, Katsuya Kito, Hisashi Hayashi, Tokiyoshi Matsuda, Yasushi Hiroshima, Mitsutoshi Miyasaka
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 6, Pp 182-186 (2014)
We have developed a hybrid-type temperature sensor using thin-film transistors. First, we evaluate temperature dependences of transistor characteristics and find that the temperature dependence of the off-leakage current is much larger than that of t
Externí odkaz:
https://doaj.org/article/c83e0d4ccfbe4f8dae90b96c6352c0aa
Autor:
Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Koretomo, Yusaku Magari, Mamoru Furuta, Mutsumi Kimura
Publikováno v:
Materials, Vol 12, Iss 19, p 3236 (2019)
We have found a memristive characteristic of an amorphous Ga-Sn-O (α-GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer
Externí odkaz:
https://doaj.org/article/1861c9a39bb84cb980736c800ef8638d
Publikováno v:
Micromachines, Vol 8, Iss 7, p 205 (2017)
We propose and demonstrate the concept of using a tuneable liquid crystal micro-lens (LCML) array to improve the image contrast of a pixelated thin film photo-transistor (TFPT) flat panel imager. Such a device can be used to image contents on paper-b
Externí odkaz:
https://doaj.org/article/a50728b5a0b24351a7f135730abd9282
Publikováno v:
Japanese Journal of Applied Physics. 62:058002
An In–Ga–Zn–O (IGZO) memristor with double layers of different oxygen vacancy (VO) densities has been developed, and long-term memory towards neuromorphic applications has been confirmed. The IGZO layer of the higher VO density functions as a p
Publikováno v:
SID Symposium Digest of Technical Papers. 52:142-144
Publikováno v:
IEICE Transactions on Electronics. :341-344
Autor:
Mutsumi Kimura, Tatsuya Aramaki, Yoku Ikeguchi, Yuhei Yamamoto, Ryo Ito, Mitsuo Tamura, Tokiyoshi Matsuda, Mutsunori Uenuma
Publikováno v:
2022 IEEE International Conference on Consumer Electronics (ICCE).
Publikováno v:
Thin Solid Films. 685:17-25
We used herein scanning internal photoemission microscopy (SIPM) that can map electrical characteristics and applied it to characterize the thermal stability of three kinds of α-Ga2O3 Schottky barrier diodes (SBDs). Good rectification characteristic