Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Tokihiro Nishihara"'
Publikováno v:
Applied Physics Express. 13(1):016504-016504-4
This is the Accepted Manuscript version of an article accepted for publication in Applied Physics Express. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Versio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da58997f5ab2e5e9bdfefc6a957a4bf2
https://hdl.handle.net/11094/84530
https://hdl.handle.net/11094/84530
Autor:
Yoshiki Iwazaki, Masanori Ueda, Onda Yosuke, Tokihiro Nishihara, Yuichi Sasajima, Tsuyoshi Yokoyama
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 61:1322-1328
This paper reports the crystal structures and piezoelectric properties of Mg and Zr co-doped AlN (MgZr-doped AlN) thin films. MgZr-doped AlN thin films on Si (100) substrates were fabricated by using a radio-frequency magnetron reactive cosputtering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01cb4f0e0fe49ef00e4e31650db3590e
https://doi.org/10.1109/tuffc.2014.3039
https://doi.org/10.1109/tuffc.2014.3039
Publikováno v:
2016 IEEE International Ultrasonics Symposium (IUS).
In this paper, we present piezoelectric co-doped (Mg,Hf) x Al 1−x N thin films, where the dopant concentration x is in the range of 0–0.13. The (Mg,Hf) x Al 1−x N thin films were prepared on Si (100) substrates with a dual magnetron with AC pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97ff16f510dc02f19868382257d0806c
https://doi.org/10.1109/ultsym.2016.7728552
https://doi.org/10.1109/ultsym.2016.7728552
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
Requirements for radio frequency (RF) devices in mobile phones have been getting more stringent, especially in multiband / carrier aggregation systems constructing many RF components. In this paper, we discuss two important items for RF acoustic devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31d06959f5398f1dccec547ec9140e0b
https://doi.org/10.1109/mwsym.2016.7540216
https://doi.org/10.1109/mwsym.2016.7540216
Autor:
Masanori Ueda, Yoshio Satoh, Motoaki Hara, Shinji Taniguchi, Ken-ya Hashimoto, Tsuyoshi Yokoyama, Tokihiro Nishihara
Publikováno v:
Japanese Journal of Applied Physics. 47:4007-4010
We have developed an X-band filter utilizing air-gap-type film bulk acoustic resonators (FBARs). The air-gap structure is simple and cost-effective. Results from both simulations and experiments demonstrate that a dome-shaped air gap was formed betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::169b112e2586a5f2e5dff6d54c2906bb
https://doi.org/10.1143/jjap.47.4007
https://doi.org/10.1143/jjap.47.4007
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 55:849-856
This paper describes a circuit model for the analysis of nonlinearity in the filters based on radio- frequency (RF) bulk acoustic wave (BAW) resonators. The nonlinear output is expressed by a current source connected parallel to the linear resonator.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc4c52917db3036536a5e531228b2550
https://doi.org/10.1109/tuffc.2008.719
https://doi.org/10.1109/tuffc.2008.719
Autor:
Shinji Taniguchi, Masafumi Iwaki, Tsuyoshi Yokoyama, Yoshio Satoh, Masanori Ueda, Tokihiro Nishihara, Jun Tsutsumi
Publikováno v:
Japanese Journal of Applied Physics. 46:4642-4646
A bulk acoustic wave filter composed of piezoelectric thin-film resonators has many features superior to those of other small filters such as a surface acoustic wave (SAW) filter and a ceramic filter. A high-Q factor and low loss are big advantages f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c99c935f3c699aac14577d447353dfdd
https://doi.org/10.1143/jjap.46.4642
https://doi.org/10.1143/jjap.46.4642
Autor:
Le Van, Minh, Motoaki, Hara, Tsuyoshi, Yokoyama, Tokihiro, Nishihara, Masanori, Ueda, Hiroki, Kuwano
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 62(11)
The first MgZr co-doped AlN-based vibrational energy harvester (VEH) is presented. (MgZr)AlN, which is a new class of doped AlN, provides high piezoelectricity and cost advantage. Using 13%-(MgZr)-doped AlN for micromachined VEHs, maximum output powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7121119e44985747804b9e8361995dfe
https://pubmed.ncbi.nlm.nih.gov/26559628
https://pubmed.ncbi.nlm.nih.gov/26559628
Publikováno v:
2015 IEEE International Ultrasonics Symposium (IUS).
Deterioration of the effective electromechanical coupling factor (K eff 2) upon improving the temperature coefficient of frequency (TCF) is a serious issue for temperature-compensated bulk acoustic wave (TC-BAW) resonators, because TC-BAW filter appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61d325a6cf34128cd2b4ef4d1549a5c1
https://doi.org/10.1109/ultsym.2015.0113
https://doi.org/10.1109/ultsym.2015.0113
Autor:
Tsuyoshi Yokoyama, Masanori Ueda, Yoshiki Iwazaki, Onda Yosuke, Tokihiro Nishihara, Yuichi Sasajima
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 62(6)
In this paper, we report new piezoelectric materials composed of charge-compensated co-doped (Mg, β) x Al 1−x N (β = Zr or Hf). The effect of the dopant element into AlN on chemical stability, crystal structure, and piezoelectric property of co-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f58a677aee722aead53bdd372f8e52e
https://pubmed.ncbi.nlm.nih.gov/26067035
https://pubmed.ncbi.nlm.nih.gov/26067035