Zobrazeno 1 - 10
of 299
pro vyhledávání: '"Tohru Honda"'
Autor:
Kentaro Harada, Nobumasa Funamori, Naoto Yamamoto, Yoshito Shimosaki, Miho Shimada, Tsukasa Miyajima, Kensei Umemori, Hiroshi Sakai, Norio Nakamura, Shogo Sakanaka, Yukinori Kobayashi, Tohru Honda, Shunsuke Nozawa, Hironori Nakao, Yasuhiro Niwa, Daisuke Wakabayashi, Kenta Amemiya, Noriyuki Igarashi
Publikováno v:
Journal of Synchrotron Radiation, Vol 29, Iss 1, Pp 118-124 (2022)
The Hybrid Ring with a superconducting-linac injector as a highly flexible synchrotron radiation source to enable new experimental techniques and enhance many existing ones is proposed. It is designed to be operated with the coexistence of the storag
Externí odkaz:
https://doaj.org/article/7982a8acf6b342be84479c27a56858cd
Autor:
Masahiko Nakanishi, Man Hoi Wong, Tomohiro Yamaguchi, Tohru Honda, Masataka Higashiwaki, Takeyoshi Onuma
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035237-035237-5 (2021)
Acceptor impurity doping is recognized as a functional tool to extend the capabilities and applications of β-Ga2O3. The effect of thermal annealing on photoexcited carriers was characterized by measuring the photocurrent spectra of nitrogen (N)-ion-
Externí odkaz:
https://doaj.org/article/19e4ebf9e8d44b4c8b5e0faa33025da9
Autor:
Masatomo Sumiya, Kiyotaka Fukuda, Hideo Iwai, Tomohiro Yamaguchi, Takeyoshi Onuma, Tohru Honda
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115225-115225-7 (2018)
We characterize the behavior caused by thermal annealing for C, O, Si and Mg ions implanted in GaN films by photothermal deflection spectroscopy (PDS) with respect to structural disorder and defect levels related to yellow luminescence. Although the
Externí odkaz:
https://doaj.org/article/3ce3190185e24782acf3695b516a3e19
Publikováno v:
Vacuum and Surface Science. 64:301-305
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb7a5a65f161483180e085755588e337
https://doi.org/10.1380/vss.64.301
https://doi.org/10.1380/vss.64.301
Autor:
Takuya ISHIBASHI, Tohru HONDA
Publikováno v:
Vacuum and Surface Science. 65:554-555
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1e47f0962fe64f44ad8ead75fabe45f
https://doi.org/10.1380/vss.65.554
https://doi.org/10.1380/vss.65.554
Autor:
Masatomo Sumiya, Naoki Toyomitsu, Yoshitaka Nakano, Jianyu Wang, Yoshitomo Harada, Liwen Sang, Takashi Sekiguchi, Tomohiro Yamaguchi, Tohru Honda
Publikováno v:
APL Materials, Vol 5, Iss 1, Pp 016105-016105-8 (2017)
We studied the emissive pits in InGaN films grown on compressive and strain-free GaN underlying layers. Pit density decreased with the full width at half maximum of ω(0002) of InGaN. The films grew on compressive and strain-free GaN underlying lay
Externí odkaz:
https://doaj.org/article/5aa90767465648e3bc98ba58b3b11627
Autor:
Rishabh Bajpai, Takayuki Tomaru, Toshikazu Suzuki, Kazuhiro Yamamoto, Takafumi Ushiba, Tohru Honda
KAGRA is the first km-scale gravitational wave detector to be constructed underground and employ cryogenics to cool down its test masses. While the underground location provides a quiet site with low seismic noise, the cooling infrastructure is known
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4dee5e4393649dd2cbd829c08790391
http://arxiv.org/abs/2207.13466
http://arxiv.org/abs/2207.13466
Autor:
Haruka Matsuura, Takeyoshi Onuma, Masatomo Sumiya, Tomohiro Yamaguchi, Bing Ren, Meiyong Liao, Tohru Honda, Liwen Sang
Publikováno v:
Applied Sciences, Vol 9, Iss 9, p 1746 (2019)
The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron m
Externí odkaz:
https://doaj.org/article/ffc5d5eec7734a5ebc282673f4b084ec
Autor:
Akito Taguchi, Takumi Yamamoto, Kentaro Kaneko, Ken Goto, Takeyoshi Onuma, Tohru Honda, Yoshinao Kumagai, Shizuo Fujita, Tomohiro Yamaguchi
Publikováno v:
Japanese Journal of Applied Physics. 62:SF1023
The heteroepitaxial growth of In2O3 on a (0001) α-Al2O3 substrate was carried out using the mist chemical vapor deposition method. The concentrations of In2O3 powder in the source precursor solution varied between 0.025 and 0.250 mol l−1. An incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3d480d47c0ffa272bdc61e80104ca6c
https://doi.org/10.35848/1347-4065/acbeba
https://doi.org/10.35848/1347-4065/acbeba
Publikováno v:
Vacuum. 207:111671
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27518f200b9b564bc258a97a550fd819
https://doi.org/10.1016/j.vacuum.2022.111671
https://doi.org/10.1016/j.vacuum.2022.111671