Zobrazeno 1 - 10
of 185
pro vyhledávání: '"Tohru Hara"'
Autor:
Masahiro Yamada, Mayako Uchida, Masao Hada, Haruka Wakabayashi, Daigo Inma, Shunji Ariyoshi, Hidetoshi Kamimura, Tohru Haraguchi
Publikováno v:
Pharmacy, Vol 12, Iss 3, p 87 (2024)
Central to the pharmacist’s role in palliative care is symptom management through direct participation in patient care and the provision of optimal pharmacotherapy to support patient outcomes. Consequently, palliative care requires extensive knowle
Externí odkaz:
https://doaj.org/article/d71b474d65fd4e899983ed92968b0367
Autor:
Shutaro Yamamoto, Tatsuya Shimomura, Kanako Kasai, Taisuke Yamazaki, Yuki Enei, Yusuke Koike, Toshihiro Ito, Tohru Harada, Nozomu Furuta, Takahiro Kimura
Publikováno v:
IJU Case Reports, Vol 6, Iss 1, Pp 65-69 (2023)
Introduction Extramammary Paget's disease is an eczematous skin condition that affects the vulva and perineum. Extramammary Paget's disease secondary to urothelial carcinoma is a rare condition that is typically treated with invasive surgical resecti
Externí odkaz:
https://doaj.org/article/6b6b8f03f7964717a042ac393d8d16ce
Publikováno v:
Microelectronics Journal. 36:749-753
One of the primary candidates for the liner/etch stop layer in damascene process is silicon nitride (Si 3 N 4 ). However, silicon nitride has a high dielectric constant of 7.0. To reduce the effective dielectric constant in Copper (Cu) damascene stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::514a4e437116690734d904fc79322bb2
https://doi.org/10.1016/j.mejo.2004.11.010
https://doi.org/10.1016/j.mejo.2004.11.010
Autor:
Tohru Hara, Subramanian Balakumar
Publikováno v:
Thin Solid Films. :186-191
This paper describes the delamination in chemical mechanical polishing for copper interconnection layer. Adhesion strength for the electroplating copper layer (Cu/barrier layer) is determined mainly by barrier layer. Adhesion strength is considerably
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3bb72d6b5847cd335e5c1ec649e40a2
https://doi.org/10.1016/j.tsf.2004.05.123
https://doi.org/10.1016/j.tsf.2004.05.123
Publikováno v:
Thin Solid Films. :231-234
During the implementation of Copper (Cu) dual damascene process, Cu contamination in the process of Cu sputtering, Cu electroplating and Cu CMP has been greatly concerned. Among this Cu contamination, one by Cu CMP process and/or Cu electroplating so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e0c6eab46807efff7e367a042cff24e
https://doi.org/10.1016/j.tsf.2004.05.040
https://doi.org/10.1016/j.tsf.2004.05.040
Autor:
T. Selvaraj, Subramanian Balakumar, X.T. Chen, B.F. Lin, Y.W. Chen, Masayo Fujimoto, Yasuhiro Shimura, Rajesh Kumar, Tohru Hara
Publikováno v:
Thin Solid Films. :161-167
One of the major challenges with integration of Cu/low-k or ultralow-k materials is to eliminate delamination during chemical mechanical planarization (CMP) process due to their porous nature and weak mechanical properties. Three different kinds of p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92b944fe80b894ed916c6e4b905733d6
https://doi.org/10.1016/j.tsf.2004.05.090
https://doi.org/10.1016/j.tsf.2004.05.090
Publikováno v:
Microelectronic Engineering. 75:183-193
An understanding of adhesion strength at Cu/barrier interface and Cu layer properties at different metal level is necessary to develop a robust planarization (CMP) process without peeling and delamination. This paper quantitatively analyzes the relat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5505a79c71b2473b24e24d8b8a805b0
https://doi.org/10.1016/j.mee.2004.05.003
https://doi.org/10.1016/j.mee.2004.05.003
Publikováno v:
Materials Science and Engineering: B. :160-163
Delamination of the silicon substrate has been studied by electron spin resonance (ESR) and thermal desorption spectroscopy (TDS) methods. The silicon surface layer was implanted with high dose H + ions through a thin SiO 2 layer. The ESR signals obs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d691850bbe3c9e897b209ddc1e8bb25f
https://doi.org/10.1016/s0921-5107(01)00984-9
https://doi.org/10.1016/s0921-5107(01)00984-9
Publikováno v:
Materials Science in Semiconductor Processing. 3:221-225
Boron ion implantation into pre-amorphized silicon is studied. Pre-amorphization is performed either by F + or Si + implantation prior to B + implantation at 10 keV with 3×10 15 ions/cm 2 . Broadening of the boron profile can be suppressed markedly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ceb4c25a6b42b89308cd58e573bd290
https://doi.org/10.1016/s1369-8001(00)00036-6
https://doi.org/10.1016/s1369-8001(00)00036-6
Publikováno v:
Applied Surface Science. :231-236
Electron spin resonance (ESR) method was used to investigate defects produced in SIMOX by As+ and B+ ion implantation. Two kinds of paramagnetic defect centers were observed. One had a g-value of 2.0055 and ΔHpp= 7.0 Oe, due to a-center, which origi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4cb7e5948259369d26357ef5d6e5e07
https://doi.org/10.1016/s0169-4332(00)00094-5
https://doi.org/10.1016/s0169-4332(00)00094-5