Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Togambayeva, A."'
Autor:
Makhavikou, M., Parkhomenko, I., Vlasukova, L., Komarov, F., Milchanin, O., Mudryi, A., Zhivulko, V., Wendler, E., Togambayeva, A., Korolik, O.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 15 November 2018 435:56-60
Autor:
Makhavikou, Maksim, Komarov, Fadei, Parkhomenko, Irina, Vlasukova, Liudmila, Milchanin, Oleg, Żuk, Jerzy, Wendler, Elke, Romanov, Ivan, Korolik, Olga, Togambayeva, Altynai
Publikováno v:
In Surface & Coatings Technology 25 June 2018 344:596-600
Publikováno v:
Вестник. Серия физическая, Vol 28, Iss 1, Pp 89-93 (2009)
The work is devoted to modeling on the computer of radiation defects generation processes in the titan irradiated by light ions, within the limits of an in cascade-probabilistic method. Algorithms and complex of programs for calculation of spectra of
Externí odkaz:
https://doaj.org/article/e6e35ba0991346a598c20904eced2ae9
Autor:
Liudmila Vlasukova, F. F. Komarov, A. K. Togambayeva, M. A. Makhavikou, O. V. Milchanin, Irina N. Parkhomenko, Olga V. Korolik, I. A. Romanov, Jerzy Żuk, Elke Wendler
Publikováno v:
Surface and Coatings Technology. 355:328-332
ZnSe nanocrystals have been formed in the silicon dioxide matrix by the sequential high-fluence implantation of Zn + and Se + ions at 500 °C. After implantation a part of samples was annealed at 1000 °C for 3 min using rapid thermal annealing. Stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::931dc18fdc63f5919680b0549490a214
https://doi.org/10.1016/j.surfcoat.2019.06.043
https://doi.org/10.1016/j.surfcoat.2019.06.043
Autor:
A. K. Togambayeva, V. Zhivulko, F. F. Komarov, O. V. Milchanin, Olga V. Korolik, A. V. Mudryi, M. A. Makhavikou, Elke Wendler, L. A. Vlasukova, Irina N. Parkhomenko
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 435:56-60
Structural and optical properties of SiO2 (600 nm)/Si films successively implanted with two types of ions (Zn and Se) or three types of ions (Zn, Se and S) and afterwards annealed at 900 °C were investigated. RS, PL and TEM methods were used to char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aea9f9e95331cde0cd6610ae61ced9e4
https://doi.org/10.1016/j.nimb.2018.05.010
https://doi.org/10.1016/j.nimb.2018.05.010
Autor:
F. F. Komarov, M. A. Makhavikou, Irina N. Parkhomenko, Elke Wendler, I. A. Romanov, Jerzy Żuk, Olga V. Korolik, A. K. Togambayeva, Liudmila Vlasukova, O. V. Milchanin
Publikováno v:
Surface and Coatings Technology. 344:596-600
ZnSe nanocrystals have been formed in the silicon dioxide matrix by the sequential high-fluence implantation of Zn+ and Se+ ions at 500 °C. After implantation a part of samples was annealed at 1000 °C for 3 min using rapid thermal annealing. Struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdcc29b3521f98911db478a1b8d6e0c6
https://doi.org/10.1016/j.surfcoat.2018.03.017
https://doi.org/10.1016/j.surfcoat.2018.03.017
Publikováno v:
International Journal of Mathematics and Physics. 8:19-23
In this work we used the method of "hot" implantation of zinc and selenium ions into SiO2/Si structures in combination with subsequent heat treatment in order to form nanosized phases. Implantation modes for ionic synthesis chosen in such a way that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b790679bb974e449b5814dd59c409b
https://doi.org/10.26577/ijmph.2017.v8.i1.03
https://doi.org/10.26577/ijmph.2017.v8.i1.03
Autor:
M. A. Makhavikou, F. F. Komarov, I. A. Romanov, A. K. Togambayeva, O. V. Milchanin, A. V. Mudryi, Irina N. Parkhomenko, Elke Wendler, L. A. Vlasukova
Publikováno v:
Journal of Nanomaterials, Vol 2019 (2019)
Samples of SiO2 (600 nm)/Si have been implanted with Sn ions (200 keV, 5×1016 cm−2 and 1×1017 cm−2) at room temperature and afterwards annealed at 800 and 900°C for 60 minutes in ambient air. The structural and light emission properties of “
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31aa804621dc6e9f6386d09d1b4d95d9
Autor:
Romanov, I., Komarov, F., Milchanin, O., Vlasukova, L., Parkhomenko, I., Makhavikou, M., Wendler, E., Mudryi, A., Togambayeva, A.
Publikováno v:
Journal of Nanomaterials; 3/26/2019, p1-9, 9p
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