Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Todd Guenther"'
Autor:
S. Lin, Jeremy L. Martin, David W. Gidley, E.T. Ryan, Kurt H. Junker, J.J. Lee, Jeff Wetzel, Jianing Sun, Todd Guenther
Publikováno v:
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
This study compares integration damage (ID) to two non-mesoporous organosilicate glass (OSG) films and several mesoporous OSG films with completely connected pores. The results show that the mesoporous OSG films are more susceptible to integration da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::329ef584447f6f4d123bb6c614055c2f
https://doi.org/10.1109/iitc.2002.1014876
https://doi.org/10.1109/iitc.2002.1014876
Autor:
David W. Gidley, Jim Connor, E. Todd Ryan, Todd Guenther, Lynne Svedberg, Melissa Freeman, Jianing Sun, Katie Yu, Jen-Jiang Lee
Publikováno v:
MRS Proceedings. 766
The compatibility of ALD and CVD metal deposition with mesoporous and microporous carbon-doped organosilicate glass (OSG) films was examined. Blanket film studies using TEM, TOF-SIMS, and positron lifetime spectroscopy demonstrate that ALD Wand TaN p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28ab0358e5aa80b81cee378684e8f5a7
https://doi.org/10.1557/proc-766-e10.8
https://doi.org/10.1557/proc-766-e10.8
Autor:
Scott Daniel Hector, S. Dakshina-Murthy, Will Conley, Wei Wu, Jen-Jiang Lee, Todd Guenther, Tom Lii, Jonathan L. Cobb, F. Huang, Saifi Usmani, Colita Parker
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL), and possibly 157-nm lithography, will require thin imaging layers (< 1500 A). Theleading EUV resist strategy utilizes thin resists based on materials designed for 248 nm wavelength exposure and hardmasks.This p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4517031a1e6be2101d2309b8b941b3d
https://doi.org/10.1117/12.436856
https://doi.org/10.1117/12.436856