Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Todd E, Harvey"'
Autor:
Matt D, Brubaker, Kristen L, Genter, Joel C, Weber, Bryan T, Spann, Alexana, Roshko, Paul T, Blanchard, Todd E, Harvey, Kris A, Bertness
Publikováno v:
Proc SPIE Int Soc Opt Eng
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW
Autor:
Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Roy H. Geiss, Todd E. Harvey, Kris A. Bertness, Igor Levin
Publikováno v:
Journal of Materials Research. 32:936-946
A comparison of two electron microscopy techniques used to determine the polarity of GaN nanowires is presented. The techniques are convergent beam electron diffraction (CBED) in TEM mode and annular bright field (ABF) imaging in aberration corrected
Autor:
Matthew D. Brubaker, Norman A. Sanford, Paul T. Blanchard, Kristine A. Bertness, Alexana Roshko, Todd E. Harvey
Publikováno v:
Materials Science in Semiconductor Processing. 55:67-71
The polarity of gallium nitride (GaN) nanowire nuclei grown on AlN layers was studied by piezoresponse force microscopy (PFM). N- or Al-polar AlN layers were grown by molecular beam epitaxy (MBE) on Si (111) substrates by use of Al- or N-rich growth
Autor:
Paul T. Blanchard, Alexana Roshko, Kris A. Bertness, Todd E. Harvey, Samuel Berweger, Norman A. Sanford, Matthew D. Brubaker, Charles A. E. Little
Publikováno v:
Nanotechnology. 31:424002
Lateral piezoresponse force microscopy (L-PFM) is demonstrated as a reliable method for determining the crystallographic polarity of individual, dispersed GaN nanowires that were functional components in electrical test structures. In contrast to PFM
Publikováno v:
physica status solidi (b). 257:1900611
The crystallographic polarity of AlN grown on Si(111) by plasma assisted molecular beam epitaxy is intentionally inverted from N-polar to Al-polar at a planar boundary. The position of the inversion boundary is controlled by a two-step growth process
Autor:
Chase T. Ellis, Joseph G. Tischler, Bryan T. Spann, Todd E. Harvey, Kris A. Bertness, Joshua R. Nolen, Matthew D. Brubaker, Joshua D. Caldwell, Thomas G. Folland
Publikováno v:
Metamaterials, Metadevices, and Metasystems 2018.
Localized surface phonon-polariton (SPhP) resonances in polar semiconductor nanostructures can provide highly sub-diffractional electromagnetic fields. Furthermore, SPhP resonances offer enhanced resonant quality factors when compared to plasmon-pola
Publikováno v:
Crystals
Volume 8
Issue 9
Crystals, Vol 8, Iss 9, p 366 (2018)
Volume 8
Issue 9
Crystals, Vol 8, Iss 9, p 366 (2018)
Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice
Autor:
Joel C. Weber, Kris A. Bertness, Todd E. Harvey, Matthew D. Brubaker, Alexana Roshko, Paul T. Blanchard, Kristen L. Genter, Bryan T. Spann
Publikováno v:
Low-Dimensional Materials and Devices 2018.
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW
Publikováno v:
Optics express. 26(11)
Two photoconductive emitters - one with a self-complementary square spiral antenna, and the other with a resonant slot antenna - were fabricated on a GaAs epilayer embedded with ErAs quantum dots. Driven with 1550 nm mode-locked lasers, ~117 μW broa
Publikováno v:
SPIE Proceedings.
This paper reports progress on a type of ultrafast photoconductive source that can be driven at 1550 nm but exhibits the robustness of GaAs (e.g., low-temperature-grown GaAs) driven at 780 nm. The approach is GaAs doped heavily with Er (≈4x1020 cm-