Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Tocca, L."'
Autor:
Zandler, G *, Rossi, L, DiCarlo, A, Tocca, L, Bonfiglio, A, Brunori, M, Lugli, P, Meneghesso, G, Zanoni, R
Publikováno v:
In Physica B: Physics of Condensed Matter 1999 272(1):558-561
Publikováno v:
CONSOIL 2010, HELMHOLTZ CENTRE FOR ENVIRONMENTAL RESEARCH, salisburgo, 2010
info:cnr-pdr/source/autori:AULENTA F., TOCCA L., REALE P., PETRANGELI PAPINI M., ROSSETTI S., MAONE M./congresso_nome:CONSOIL 2010, HELMHOLTZ CENTRE FOR ENVIRONMENTAL RESEARCH/congresso_luogo:salisburgo/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:AULENTA F., TOCCA L., REALE P., PETRANGELI PAPINI M., ROSSETTI S., MAONE M./congresso_nome:CONSOIL 2010, HELMHOLTZ CENTRE FOR ENVIRONMENTAL RESEARCH/congresso_luogo:salisburgo/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::386da6a7d1a794fab8f5d9ef4bdb1152
http://www.cnr.it/prodotto/i/89773
http://www.cnr.it/prodotto/i/89773
Autor:
Tocca, L., Di Carlo, A., Berliocchi, M., Lugli, P., Bartocci, M., De Santis, G., Giolo, G., Rossi, L., Gemma, M.
Publikováno v:
Tocca, L. ; Di Carlo, A. ; Berliocchi, M. ; Lugli, P. ; Bartocci, M. ; De Santis, G. ; Giolo, G. ; Rossi, L. ; Gemma, M. (2001) Accurate estimation of layer temperature in PHEMT MMIC by photoconductance measurements. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor deposition system will be demonstrated.Excellent large and small area DC and RF results are obtained for single and double heterojunction structures. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0ef510d487956ddd16a8c50ab658274
http://amsacta.unibo.it/60/
http://amsacta.unibo.it/60/
Publikováno v:
Sleiman, A. ; Di Carlo, A. ; Tocca, L. ; Fiordiponti, R. ; Lugli, P. (2000) Tayloring the Breakdown Voltage in High Electron Mobility Transistor: Theoretical and Experimental Results. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
In this paper the effect of a body contact to increase the breakdown voltage in GaAs based pseudomorphic HEMT has been theoretically investigated. The body contact is formed by a p-doped substrate connected to an ohmic back contact. By using a Monte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffc6255ed97e31a8d812252e8d520228
Autor:
Sleiman, A., Rossi, L., Di Carlo, A., Tocca, L., Bonfiglio, A., Brunori, M., Lugli, P., Zandler, G, Meneghesso, G., Zanoni, E., Canali, C., Cetronio, A., Lanzieri, M., Peroni, M.
Publikováno v:
Sleiman, A. ; Rossi, L. ; Di Carlo, A. ; Tocca, L. ; Bonfiglio, A. ; Brunori, M. ; Lugli, P. ; Zandler, G ; Meneghesso, G. ; Zanoni, E. ; Canali, C. ; Cetronio, A. ; Lanzieri, M. ; Peroni, M. (1999) Experimental and theoretical studies of near-breakdown phenomena in GaAs-based heterostructure FETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
We have investigated electrical and optical phenomena related to impact ionization in the near breakdown regime of heterostructure FETs. The experimental analysis is based on electroluminescence spectroscopy correlated to minority carrier gate curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e7cb99fb2cfb2724822d7e7a95cd567
Autor:
Sleiman, A., Rossi, L., DI CARLO, A., Tocca, L., Bonfiglio, A., Brunori, M., Lugli, P., Zandler, G., Meneghesso, Gaudenzio, Zanoni, Enrico, Canali, C., Cetronio, A., Lanzieri, M., Peroni, M.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3657::d97268482f73310b4c48a84c66431b3b
http://hdl.handle.net/11577/2462340
http://hdl.handle.net/11577/2462340
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Publikováno v:
In Journal of Biotechnology 2010 150 Supplement:34-35