Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Toby Hopf"'
Autor:
Harold Dekkers, Frank Holsteyns, Lars-Ake Ragnarsson, Naoto Horiguchi, Boon Teik Chan, Hideaki Iino, Yusuke Oniki, Daire J. Cott, Efrain Altamirano Sanchez, Toby Hopf, Farid Sebaai, Eugenio Dentoni Litta
Publikováno v:
Solid State Phenomena. 314:119-126
This paper addresses challenges and solutions of replacement metal gate of gate-all-around nanosheet devices. The unit process and integration solutions for the metal gate patterning as well as interface dipole patterning to offer multiple threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19006e5961359aac26a8f8e14ee2f174
https://doi.org/10.4028/www.scientific.net/ssp.314.119
https://doi.org/10.4028/www.scientific.net/ssp.314.119
Autor:
Jeffrey C. McCallum, David N. Jamieson, Changyi Yang, Andrew D. Alves, Brett C. Johnson, Toby Hopf, Samuel C. Thompson, Jessica A. van Donkelaar
Publikováno v:
Advances in Materials Science and Engineering, Vol 2012 (2012)
Interest in single-ion implantation is driven in part by research into development of solid-state devices that exhibit quantum behaviour in their electronic or optical characteristics. Here, we provide an overview of international research work on si
Externí odkaz:
https://doaj.org/article/8ac538f4f93844dda0c7e68d8e3f45e4
Autor:
Geert Mannaert, Lars-Ake Ragnarsson, Els Van Besien, A. Dangol, Adrian Chasin, Diana Tsvetanova, Soon Aik Chew, S. Kubicek, Romain Ritzenthaler, Harold Dekkers, Andriy Hikavyy, Dan Mocuta, Hans Mertens, Naoto Horiguchi, Yoshiaki Kikuchi, Tom Schram, Erik Rosseel, An De Keersgieter, Zheng Tao, Kathy Barla, Katia Devriendt, Eddy Kunnen, Toby Hopf, Min-Soo Kim, Kurt Wostyn, Steven Demuynck
Publikováno v:
ECS Transactions. 77:19-30
Gate-all-around (GAA) transistors based on vertically stacked horizontal nanowires are promising candidates to replace FinFETs in future CMOS technology nodes. First of all, GAA devices provide optimal electrostatic control over semiconducting nanowi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3df56b170bbc0db760b5a7d93692a017
https://doi.org/10.1149/07705.0019ecst
https://doi.org/10.1149/07705.0019ecst
Autor:
Joseph Ervin, Toby Hopf, S. Baudot, A. Soussou, Benjamin Vincent, Pieter Weckx, Steven Demuynck, A. P. Milenin, S. Wang
Publikováno v:
Advances in Patterning Materials and Processes XXXVI
In 5 nm FinFET technology and beyond, SRAM cell size reduction to 6 tracks is required with a fin pitch of 24 nm. Fin depopulation is mandatory to enable the area scaling, but it becomes challenging at small pitches. In the first part, each process f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f07714ea1544a13990855ff08a35b9aa
https://doi.org/10.1117/12.2514927
https://doi.org/10.1117/12.2514927
Autor:
SungEun Hong, Elizabeth Wolfer, Geert Mannaert, Huirong Yao, Joon Yeon Cho, Munirathna Padmanaban, Douglas Mckenzie, Toby Hopf, Claire Petermann, Salem K. Mullen, Farid Sebaai, Christophe Lorant, Diziana Vangoidsenhoven, Alberto D. Dioses, Efrain Altamirano Sanchez, Dalil Rahman, Danilo De Simone
Publikováno v:
Journal of Photopolymer Science and Technology. 29:59-67
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7a32daf272796759c51a8ba78878931
https://doi.org/10.2494/photopolymer.29.59
https://doi.org/10.2494/photopolymer.29.59
Autor:
Christophe Lorant, Douglas Mckenzie, Toby Hopf, Huirong Yao, Farid Sebaai, Daniele Piumi, Efrain Altamirano-Sánchez, Claire Petermann, Salem K. Mullen, Dalil Rahman, Elizabeth Wolfer, Joonyeon Cho, Geert Mannaert, Munirathna Padmanaban, SungEun Hong
Publikováno v:
SPIE Proceedings.
There is a growing interest in new spin on metal oxide hard mask materials for advanced patterning solutions both in BEOL and FEOL processing. Understanding how these materials respond to plasma conditions may create a competitive advantage. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::016c6d3faa2e60fab7edd640f01276c4
https://doi.org/10.1117/12.2264323
https://doi.org/10.1117/12.2264323
Autor:
Søren E. S. Andresen, Rolf Brenner, Cameron J. Wellard, Changyi Yang, Toby Hopf, Christopher C. Escott, Robert G. Clark, Andrew S. Dzurak, David N. Jamieson, Lloyd C. L. Hollenberg
Publikováno v:
Nano Letters; Jul2007, Vol. 7 Issue 7, p2000-2003, 4p