Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Tobias Wikstrom"'
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabrication process of the device and improve the ruggedness as well as electrothermal performance of the device. The planar IGCT concept has been verified exp
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The paper details the development of a device intended for use as a sacrificial cell bypass switch in cascaded multi-level topologies with serial redundancy of cells of up to 4.6 kV (DC). The design is based on an 8.5 kV phase-control thyristor for i
Publikováno v:
2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia).
A 94mm, Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT) for application at high DC voltage, up to 5.3kV has been manufactured and characterized. The design challenges for this type of device operating at such high voltage are to bal
Autor:
A. Kopta, C. Corvasce, J. Vobecky, Charalampos Papadopoulos, F. Dugal, Maxi Andenna, U. Vemulapati, M. Rahimo, S. Hartmann, Tobias Wikstrom, F. Fischer
Publikováno v:
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia).
This paper gives an overview of the recent progress of high voltage silicon based power devices for high power grid applications, traction- and industrial drives. The first part of the paper covers the latest developments of thyristor based technolog
Autor:
Tobias Wikstrom, Mark Frecker, Christoph Waltisberg, Thomas Stiasny, Peter Steimer, Umamaheswara Vemulapati, Munaf Rahimo
Publikováno v:
2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe).
A large area (150mm) high voltage (6.5kV) Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT) has been developed for low frequency high power electronics applications. The devices were fabricated with GCT to diode active area ratio of 1
Autor:
Neophytos Lophitis, Florin Udrea, Martin Arnold, Iulian Nistor, Marina Antoniou, Tobias Wikstrom, Jan Vobecky
Publikováno v:
IET Circuits, Devices & Systems. 8:221-226
The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this
Autor:
Iulian Nistor, Neophytos Lophitis, Marina Antoniou, Florin Udrea, Martin Arnold, Tobias Wikstrom, Friedhelm Dr. Bauer, Jan Vobecky
Publikováno v:
IEEE Transactions on Electron Devices. 60:819-826
This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extr
Autor:
Jan Vobecky, Umamaheswara Vemulapati, Tobias Wikstrom, Munaf Rahimo, Thomas Stiasny, Martin Arnold, Bjorn Backlund
Publikováno v:
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
In this paper, we review the progress made recently for further developing the Integrated Gate Commutated Thyristor (IGCT) device concept for high power electronics applications. A wide range of newly introduced IGCT technologies are discussed and re
Autor:
Jan Vobecky, Marina Antoniou, Iulian Nistor, Tobias Wikstrom, Florin Udrea, Martin Arnold, Neophytos Lophitis, Munaf Rahimo
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
In this paper we introduce a new GCT design, namely the Stripe Fortified GCT, for the purpose of maximizing the controllable current by optimizing the current flow path in the device during turn-off. The main design of the new device along with varia
Autor:
Hendrik Ravener, Thomas Stiasny, Munaf Rahimo, Tobias Wikstrom, Martin Arnold, Christoph Waltisberg
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A 4500V RC-IGCT switching more than 10 kA in both switch and diode mode was developed for application in cascaded multilevel topologies. The performance was facilitated by using most of a 150 mm silicon wafer for a single device. Furthermore, the str