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Autor:
Morten Hannibal Madsen, Rawa Tanta, Gunjan Nagda, Anna Wulff Christensen, Peter Krogstrup, Sergej Schuwalow, Daria Beznasyuk, Martin Espiñeira Cachaza, Tobias Særkjær
Publikováno v:
Physical Review Materials
Cachaza, M E, Christensen, A W, Beznasyuk, D, Saerkjaer, T, Madsen, M H, Tanta, R, Nagda, G, Schuwalow, S & Krogstrup, P 2021, ' Selective area growth rates of III-V nanowires ', Physical Review Materials, vol. 5, no. 9, 094601 . https://doi.org/10.1103/PhysRevMaterials.5.094601
Cachaza, M E, Christensen, A W, Beznasyuk, D, Saerkjaer, T, Madsen, M H, Tanta, R, Nagda, G, Schuwalow, S & Krogstrup, P 2021, ' Selective area growth rates of III-V nanowires ', Physical Review Materials, vol. 5, no. 9, 094601 . https://doi.org/10.1103/PhysRevMaterials.5.094601
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (