Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tobias Roesener"'
Autor:
Tobias Roesener
Publikováno v:
PhotonicsViews. 16:72-74
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf5d6b3a61c6fe44cb8b7e3222c81522
https://doi.org/10.1002/phvs.201900020
https://doi.org/10.1002/phvs.201900020
Publikováno v:
Thin Solid Films. 548:358-365
Nanoindentation was used to determine material hardness and Young's modulus in a wide compositional range of GaAsxP1−x, Ga1−xInxP, Ga1−xInxAs and Al0.5Ga1−xInxAs compound semiconductors. Ternary and quaternary samples were grown on misoriente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae107c3c5792111ce81382c95676a8d1
https://doi.org/10.1016/j.tsf.2013.08.079
https://doi.org/10.1016/j.tsf.2013.08.079
Autor:
Karen Derendorf, V. Klinger, Stephanie Essig, E. Oliva, Simon P. Philipps, Jan Benick, Michael Schachtner, Martin Hermle, Frank Dimroth, Wolfgang Jäger, Tobias Roesener, Gerald Siefer
Publikováno v:
IEEE Journal of Photovoltaics. 3:1423-1428
GaInP/GaAs//Si solar cells with three active p-n junctions were fabricated by surface activated direct wafer bonding between GaAs and Si. The direct wafer bond is performed at room temperature and leads to a conductive and transparent interface. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51c07589f330527130f4385a03e97802
https://doi.org/10.1109/jphotov.2013.2273097
https://doi.org/10.1109/jphotov.2013.2273097
Publikováno v:
Journal of Crystal Growth. 368:21-28
Lattice-mismatched heteroepitaxial growth in compound semiconductor layer structures, e.g. metamorphic buffers, is frequently used to combine materials with favorable properties. A detailed understanding of the strain relaxation during growth is impo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::831de7c73570ac321366a8d5be5ac122
https://doi.org/10.1016/j.jcrysgro.2013.01.007
https://doi.org/10.1016/j.jcrysgro.2013.01.007
Autor:
Wolfgang Jäger, Kerstin Volz, Tobias Roesener, Gerald Siefer, A. Wekkeli, Christoph Weuffen, Frank Dimroth, E. Oliva, Andreas W. Bett, Thomas Hannappel, Stephanie Essig, D. Häussler
Two different process technologies were investigated for the fabrication of high-efficiency GaInP/GaAs dual-junction solar cells on silicon: direct epitaxial growth and layer transfer combined with semiconductor wafer bonding. The intention of this r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88a9cc623d655008ca90bc1ccab26161
https://publica.fraunhofer.de/handle/publica/236434
https://publica.fraunhofer.de/handle/publica/236434
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
Lattice-mismatched materials can help to improve the theoretical efficiency potential of today's III-V multi-junction solar cells. Carefully designed buffer structures are incorporated in these solar cells to grade the lattice constant and relax the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15d831630e79f9cfa84627eff5a5c3e4
https://doi.org/10.1109/pvsc.2011.6186003
https://doi.org/10.1109/pvsc.2011.6186003
Autor:
Wolfgang Guter, E. Oliva, Elke Welser, Matthias Meusel, Andreas W. Bett, Frank Dimroth, Rene Kellenbenz, Simon P. Philipps, Gerhard Peharz, Tobias Roesener, Marc Steiner, V. Klinger
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
III–V multi-junction concentrator solar cells today are optimized for maximum conversion efficiency under AM1.5d standard test conditions at 25 °C cell temperature. But, a higher efficiency for a multi-junction solar cell under these artificial co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c004aaa602b11836a618d511d00e2f
https://doi.org/10.1109/pvsc.2010.5614168
https://doi.org/10.1109/pvsc.2010.5614168