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pro vyhledávání: '"Tobias L Brown-Heft"'
Autor:
Prashant Majhi, Le Van H, Tung I-Cheng, Brian S. Doyle, Yoo Hui Jae, Tobias L Brown-Heft, Yu-Jin Chen, Abhishek Sharma, Miriam Reshotko, Jack T. Kavalieros, Matthew V. Metz
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Scaled ferroelectric transistors (L g =76 nm) in a back- gated configuration are fabricated with a channel-last process flow. Using this approach, optimization of the ferroelectric gate oxide film can be decoupled from that of the semiconductor chann