Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Tobias Erlbacher"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract In this study ion‐implanted lateral 4H‐SiC pin diodes are reported, which show an unexpectedly high room temperature in‐plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying tr
Externí odkaz:
https://doaj.org/article/05008ca9d92d48b58e98a78a0936ceb2
Autor:
Hee-Jae Lee, Geon-Hee Lee, Seung-Hwan Chung, Dong-Wook Byun, Michael A. Schweitz, Dae Hwan Chun, Nack Yong Joo, Minwho Lim, Tobias Erlbacher, Sang-Mo Koo
Publikováno v:
Micro, Vol 3, Iss 4, Pp 775-784 (2023)
The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate its potential as a next-generation power semiconductor material. However, the thermal condu
Externí odkaz:
https://doaj.org/article/6cd7942e5e084d04a99e15c6c2957133
Autor:
Joost Romijn, Sten Vollebregt, Luke M. Middelburg, Brahim El Mansouri, Henk W. van Zeijl, Alexander May, Tobias Erlbacher, Johan Leijtens, Guoqi Zhang, Pasqualina M. Sarro
Publikováno v:
Microsystems & Nanoengineering, Vol 8, Iss 1, Pp 1-17 (2022)
Externí odkaz:
https://doaj.org/article/811b4ca352254b2ab441c4e72124663b
Publikováno v:
Materials, Vol 15, Iss 1, p 50 (2021)
Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation m
Externí odkaz:
https://doaj.org/article/2f8aa9d8b3844fc699061843d74f9ef1
Publikováno v:
Key Engineering Materials. 947:77-82
4H silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles. This work features the first ever reported 4H-SiC pin photodiodes with an implanted p-emitter a
Publikováno v:
Key Engineering Materials. 947:57-62
To scale digital circuits, symmetric threshold voltages (Vth) for n-type transistors (NMOS) and p-type transistors (PMOS) are important. One step towards this in silicon carbide (SiC) is selecting a p-doped polysilicon (pPolySi). This implementation
Publikováno v:
Materials Science Forum. 1090:127-133
For the ongoing commercialization of power devices based on 4H-SiC, increasing the yield and improving the reliability of these devices is becoming more and more important. In this investigation, gate oxide on 4H-SiC was examined by time-zero dielect
Autor:
Lirong Z. Broderick, Jonathan Moult, Oleg Rusch, Tong Tong, Tobias Erlbacher, Yunji L. Corcoran
Publikováno v:
Key Engineering Materials. 946:103-110
A systematic experimental study is conducted on floating field rings (FFR) incorporated into 4H-SiC junction barrier Schottky (JBS) diodes across four voltage ratings 650, 1200, 1700 and 3300V, in pursuit of highly efficient FFR designs. 30 designs o
Autor:
Minwho Lim, Constantin Csato, Julietta Förthner, Oleg Rusch, Kevin Ehrensberger, Barbara Kupfer, Susanne Beuer, Susanne Oertel, Dong Wook Byun, Seong Jun Kim, Sang Mo Koo, Hoon Kyu Shin, Tobias Erlbacher
Publikováno v:
Key Engineering Materials. 945:55-59
In this paper, the modeling of SJ-MOSFETs beyond the voltage class of 3.3 kV simulated with verified deep aluminum box-like shaped profiles by using TCAD simulation is described. The simulation results are used to investigate the influence of ion imp
Autor:
Joost Romijn, Sten Vollebregt, Vincent G. de Bie, Luke M. Middelburg, Brahim El Mansouri, Henk W. van Zeijl, Alexander May, Tobias Erlbacher, Johan Leijtens, Guoqi Zhang, Pasqualina M. Sarro
Publikováno v:
Sensors and Actuators A: Physical: an international journal devoted to research and development of physical and chemical transducers, 354
The next generation of satellites will need to tackle tomorrow's challenges for communication, navigation and observation. In order to do so, it is expected that the amount of satellites in orbit will keep increasing, form smart constellations and mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8d1701574d1abb66210ef8929bc21d4
http://resolver.tudelft.nl/uuid:8d6daac3-c50c-4376-80b3-73c9521d7bb8
http://resolver.tudelft.nl/uuid:8d6daac3-c50c-4376-80b3-73c9521d7bb8