Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Tobias Denig"'
Publikováno v:
Carbon. 99:212-221
This research explores the surface chemistry of halogen based plasmas on silicon carbide and is aimed at the synthesis of large area graphene-on-insulator films. In these studies, 6H–SiC (0001) substrates were etched using either CF4 and Cl2 based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa69aabded442cf48901a70ad47f3bc7
https://doi.org/10.1016/j.carbon.2015.11.067
https://doi.org/10.1016/j.carbon.2015.11.067
Publikováno v:
MRS Proceedings. 1259
Halogen based (CF4 and Cl2) inductively coupled reactive ion etching (ICP-RIE) has been used to selectively etch silicon from 6H-SiC to produce a controlled number of carbon layers. After annealing at temperatures in the range of 550 °C to 1100 °C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::751808f1a7bbe2977147573a7e74763f
https://doi.org/10.1557/proc-1259-s17-02
https://doi.org/10.1557/proc-1259-s17-02
Autor:
Andrew Balling, Srikanth Raghavan, Dimitris Korakakis, Dinesh K. Penigalapati, Ronak Rahimi, C. D. Stinespring, Tobias Denig, Andrew A. Woodworth, N.P. Shelton
Publikováno v:
MRS Proceedings. 1056
Silicon Carbide possesses a combination of properties that make it ideal for use in electronics. Its high values of electric breakdown field, melting point and saturated electron drift velocity have attracted the attention of the semiconductor commun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c9862d4631ce43bb503a4de73e80ca9
https://doi.org/10.1557/proc-1056-hh08-05
https://doi.org/10.1557/proc-1056-hh08-05
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30:030605
The feasibility of a halogen-based surface chemical route to the synthesis of large area graphene-on-insulator films is reported. Both CF4- and Cl2-based plasmas have been used to etch 6H-SiC (0001) surfaces, which were then annealed at 970 °C. Thes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d2ee927903e2ecd3ad614698c0d4f13
https://doi.org/10.1116/1.4710997
https://doi.org/10.1116/1.4710997